Abstract:SiGe quantum dot molecules (QDMs) grown on patterned Si (001) substrates by molecular beam epitaxy were studied. Experimental results showed that the density, the dimension, and the dimension distribution of the SiGe QDMs grown in the windows were dependent on the window size. When the thickness of the Si0.8Ge0.2 film was 40 nm, QDMs only appeared in the unpatterned areas of the Si substrate and none could be found inside the windows of 6×6 μm2 on the same substrate. However, when the thickness of Si0.8Ge0.2 film was increased to 80 nm, QDMs appeared both inside the windows and in the unpatterned areas, and the density of QDMs was reduced with the decrease in the window size. We attribute these results to the different strain relaxations in different size windows, which are caused by the edge effect of the epitaxial film in the window. Based on these experimental results we discuss the formation and the size stability of the QDMs and conclude that the formation of the SiGe QDM originates from an intrinsic cause of the strain relief mechanism. This work also shows that by means of the edge induced strain relaxation of the epitaxial film in the window, it is possible to reveal the influence of the strain on some physical properties of the SiGe film without changing its Ge atomic fraction.

Self-Assembled Sige Quantum Rings Grown on Si(001) by Molecular Beam Epitaxy

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Growth Mechanism Of Gesi Quantum Rings On Si(001)

Growth and Shape Preservation of Self-Assembled SiGe Quantum Rings

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Shape Preservation of Self-Assembled SiGe Quantum Rings During Si Capping

Influencing factors on the size uniformity of self-assembled SiGe quantum rings grown by molecular beam epitaxy.

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Conductive Atomic Force Microscopy Studies on the Transformation of Gesi Quantum Dots to Quantum Rings

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Sige Quantum Dot Molecules Grown on Patterned Si (001) Substrates

Ordered GeSi nanorings grown on patterned Si (001) substrates

Electrical Properties of Individual Self-Assembled Gesi Quantum Rings

Silicon-based low dimensional quantum structure - self-assembly grown germanium quantum dots

Self‐Assembled Si Quantum‐Ring Structures on a Si Substrate by Plasma‐Enhanced Chemical Vapor Deposition Based on a Growth‐Etching Competition Mechanism

Self-organized germanium quantum dots grown by molecular beam epitaxy on Si(100)

Growth of Ge quantum dots on SiO2/Si(111) surface

Thermally Oxidized Formation Of New Ge Dots Over As-Grown Ge Dots In The Si Capping Layer

Local Structure of Ge Quantum Dots Self-Assembled on Si(100) Probed by X-Ray Absorption Fine-Structure Spectroscopy

Precisely ordered Ge quantum dots on a patterned Si microring for enhanced light-emission

Phosphorus-mediated growth of Ge quantum dots on Si(001)