Abstract:The dense domes of Ge quantum dots on Si （001） substrate with a monomodal morphology distribution are deposited at different temperatures by ion beam sputtering （IBS）. The areal density of the Ge quantum dots is observed to increase with elevating temperature, but the dots size to decrease. As the deposition temperature increases to 750 ℃ , the smaller Ge quantum dots each with a height of 14.5 nm and base width of 52.7 nm are obtained by sputtering 15 monolayer Ge coverage, and the dots areal density is up to 1.68 × 10^10 cm^-2 at the same time. Thus the evolution of Ge quantum dot prepared by IBS is very different from that by vapor deposition at thermal equilibrium condition. The stable shape and the size distribution are demonstrated to result from the kinetic behavior of the surface atoms which is restricted by the thermodynamic limitations. A mix-crystal interface including amorphous and crystal components is revealed by Raman spectrum, and this special interface is demonstrated to contribute to the high density of Ge quantum dots, since the boundaries between the two different components can provide more preferential centers for the nucleation. As the density increases at high deposition temperature, the elastic repulsion between islands is enhanced, resulting in the surface atoms growing along the orientation of high index during the IBS deposition, and inducing the increase in aspect ratio and the reduction in island size.

Influencing factors on the size uniformity of self-assembled SiGe quantum rings grown by molecular beam epitaxy.

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Self-Assembled Sige Quantum Rings Grown on Si(001) by Molecular Beam Epitaxy

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Growth of Ge Quantum Dot at the Mix-Crystal Interface Self-Induced on the Ion Beam Sputtering Deposition

Growth Mechanism Of Gesi Quantum Rings On Si(001)

Factors Influencing Epitaxial Growth of Three-Dimensional Ge Quantum Dot Crystals on Pit-Patterned Si Substrate.

Silicon-based low dimensional quantum structure - self-assembly grown germanium quantum dots

Growth and Shape Preservation of Self-Assembled SiGe Quantum Rings

The Growth of SiGe Quantum Rings in Au Thin Films on Epitaxial SiGe on Silicon

Strain Modification in Thin Si1−x−yGexCy Alloys on (100) Si for Formation of High Density and Uniformly Sized Quantum Dots

Electronic properties of single Ge/Si quantum dot grown by ion beam sputtering deposition.

Influence Of The Growth Temperature Of Si Buffer Layers On Ge Quantum Dots

Phosphorus-mediated growth of Ge quantum dots on Si(001)

Current density effects on the growth of self-assembled Ge/Si quantum dots prepared by ion beam sputtering deposition

Self-organized germanium quantum dots grown by molecular beam epitaxy on Si(100)

Evolution of Ge/Si Quantum Dots Self-Assembled Grown by Ion Beam Sputtering

Mechanisms for directed self-assembly of heteroepitaxial Ge/Si quantum dots with deterministic placement and sub-23nm spacing on SiC nanotemplates

Densely packed Ge quantum dots grown on SiO2/Si substrate☆

A Two-Stage Molecular Beam Epitaxial Growth Method to Fabricate Small and Uniform Ge Quantum Dots on Si(1 0 0)

A two-stage molecular beam epitaxial growth method to fabricate small and uniform Ge quantum dots on Si(100)