Abstract:We investigate the nanoheteroepitaxy of SiGe and Ge quantum dots (QDs) grown on nanotips substrates realized in Si(001) wafers. Due to the lattice strain compliance, enabled by the nanometric size of the tip and the limited dot/substrate interface area, which helps to reduce dot/substrate interdiffusion, the strain and SiGe composition in the QDs could be decoupled. This demonstrates a key advantage of the nanoheteroepitaxy over the Stranski-Krastanow growth mechanism. Nearly semi-spherical, defect-free, ∼100 nm wide SiGe QDs with different Ge contents were successfully grown on the nanotips with high selectivity and size uniformity. On the dots, thin dielectric capping layers were deposited, improving the optical properties by the passivation of surface states. Intense photoluminescence was measured from all samples investigated with emission energy, intensity, and spectral linewidth dependent on the SiGe composition of the QDs and the different capping layers. Radiative recombination occurs in the QDs, and its energy matches the results of band-structure calculations that consider strain compliance between the QD and the tip. The nanotips arrangement and the selective growth of QDs allow to studying the PL emission from only 3-4 QDs, demonstrating a bright emission and the possibility of selective addressing. These findings will support the design of optoelectronic devices based on CMOS-compatible emitters.

Germanium Dots with Highly Uniform Size Distribution Grown on Si(100) Substrate by Molecular Beam Epitaxy

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Self-organized germanium quantum dots grown by molecular beam epitaxy on Si(100)

High-density Ge Dots Grown on Si Substrate by Modified S-K Method

A two-stage molecular beam epitaxial growth method to fabricate small and uniform Ge quantum dots on Si(100)

A Two-Stage Molecular Beam Epitaxial Growth Method to Fabricate Small and Uniform Ge Quantum Dots on Si(1 0 0)

Silicon-based low dimensional quantum structure - self-assembly grown germanium quantum dots

Densely packed Ge quantum dots grown on SiO2/Si substrate☆

Optimal Growth of Ge-rich Dots on Si(001) Substrates with Hexagonal Packed Pit Patterns.

Small-Size Ge/Si(001) Quantum Dots Grown By Molecular Boam Epitaxy

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Ultra-high-density Ge quantum dots on insulator prepared by high-vacuum electron-beam evaporation

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Growth of Ge Quantum Dots on Vicinal Si(001) Substrate by Solid Phase Epitaxy

Characterization of a Czochralski Grown Silicon Crystal Doped with 1020 Cm‐3 Germanium

Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence

Mcrostructure and Optical Properties of Ge(Si) Dots Grown on Si

Optical properties of Ge/Si quantum dot superlattices

Growth of Ge quantum dots on SiO2/Si(111) surface