Abstract:We investigated the molecular beam epitaxy growth of three-dimensional (3D) Ge quantum dot crystals (QDCs) on periodically pit-patterned Si substrates. A series of factors influencing the growth of QDCs were investigated in detail and the optimized growth conditions were found. The growth of the Si buffer layer and the first quantum dot (QD) layer play a key role in the growth of QDCs. The pit facet inclination angle decreased with increasing buffer layer thickness, and its optimized value was found to be around 21 degrees, ensuring that all the QDs in the first layer nucleate within the pits. A large Ge deposition amount in the first QD layer favors strain build-up by QDs, size uniformity of QDs and hence periodicity of the strain distribution; a thin Si spacer layer favors strain correlation along the growth direction; both effects contribute to the vertical ordering of the QDCs. Results obtained by atomic force microscopy and cross-sectional transmission electron microscopy showed that 3D ordering was achieved in the Ge QDCs with the highest ever areal dot density of 1.2 x 10(10) cm(-2), and that the lateral and the vertical interdot spacing were similar to 10 and similar to 2.5 nm, respectively.

Optimal Growth of Ge-rich Dots on Si(001) Substrates with Hexagonal Packed Pit Patterns.

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

High-density Ge Dots Grown on Si Substrate by Modified S-K Method

Densely packed Ge quantum dots grown on SiO2/Si substrate☆

Germanium Dots with Highly Uniform Size Distribution Grown on Si(100) Substrate by Molecular Beam Epitaxy

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

A two-stage molecular beam epitaxial growth method to fabricate small and uniform Ge quantum dots on Si(100)

A Two-Stage Molecular Beam Epitaxial Growth Method to Fabricate Small and Uniform Ge Quantum Dots on Si(1 0 0)

Ordering of low-density Ge quantum dot on patterned Si substrate

Deposition of high-density Ge quantum dots on ultra-thin SiO2/Si(111) film surface

Deposition of high-density Ge quantum dots on ultra-thin SiO2/Si(1 1 1) film surface

Small-Size Ge/Si(001) Quantum Dots Grown By Molecular Boam Epitaxy

Small ordered Ge quantum dots growth on Si (100) hollow nanopillars

Growth of Ge quantum dots on SiO2/Si(111) surface

Growth of Ge Quantum Dots on Vicinal Si(001) Substrate by Solid Phase Epitaxy

Factors Influencing Epitaxial Growth of Three-Dimensional Ge Quantum Dot Crystals on Pit-Patterned Si Substrate.

Study of Si and Ge growth on Si(100) surface

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Thermally Oxidized Formation Of New Ge Dots Over As-Grown Ge Dots In The Si Capping Layer

Phosphorus-mediated growth of Ge quantum dots on Si(001)