Abstract:A series of zero-dimensional Ge/Si quantum dots (QDs) samples are fabricated by inducing the transformation from the two-dimensional Ge thin film, which is grown by the traditional direct current (DC) magnetron sputtering, via regulating the annealing process. The QD density increases sharply after the post rapid thermal annealing (PRTA). The observations of atomic force microscopy (AFM) and Raman spectroscopy suggest that the good morphology of Ge QDs results from an appropriate thermodynamics and kinetics surrounding shaped by the cooperative interaction of the Ge-Si lattice mismatch, the film's surface temperature, and the difference in thermal expansion coefficients between Ge and Si. The photoluminescence (PL) peaks of Ge QDs are detected in monolayer Ge QDs with ultrahigh density at 17 K. The Metal-Ge/Si QDs-Metal (MGM) photodetector fabricated from the ultrahigh-density QDs sample exhibits a relatively high current gain, absolute photoelectric responsivity, and internal quantum efficiency (IQE). Our results demonstrate that the high-quality Ge QDs with strong light absorption and quantum confinement effect can be realized by modulating DC magnetron sputtering and the PRTA process. This paves the way for realizing silicon-based optoelectronic devices with high performance by the traditional, relatively low-cost, and large-scale production nanomaterial fabricating method.

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Structure and Optical Properties of Ge/Si Quantum Dots Formed by Driving the Evolution of Ge Thin Films Via Thermal Annealing

Annealing Effects on the Microstructure of Ge/Si(001) Quantum Dots

Photoluminescence of Ge quantum dots buried in silicon

Electronic Properties and Morphologies of Ge Quantum Dots with Annealing Temperature

Optical properties of Ge/Si quantum dot superlattices

Mechanism for Coarsening of P-mediated Ge Quantum Dots During In-Situ Annealing

Investigation on Preparation of Ge Quantum Dots in $sio_2$ Thin Films

Densely packed Ge quantum dots grown on SiO2/Si substrate☆

Microstructure and optical response optimization of Ge/Si quantum dots transformed from the sputtering-grown Ge thin film by manipulating the thermal annealing.

Evolution of Ge and Sige Quantum Dots under Excimer Laser Annealing

Study on the Annealing Growth of Ge Dots at High Deposition Rate by Using Magnetron Sputtering Technique

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Interface Interdiffusion Intensified by Formation of Quantum Dots

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Evolution of Ge/Si Quantum Dots Self-Assembled Grown by Ion Beam Sputtering

Growth of Ge quantum dots on SiO2/Si(111) surface

Investigation of Ge-Si Atomic Interdiffusion in Ge Nano-dots Multilayer Structure by Double Crystal X-ray Diffraction

Mcrostructure and Optical Properties of Ge(Si) Dots Grown on Si

Deposition of high-density Ge quantum dots on ultra-thin SiO2/Si(1 1 1) film surface