Growth of Ge quantum dots on SiO2/Si(111) surface

Kefan Wang,Bin Sheng,JinFeng Liu,Pengshou Xu,Haibin Pan,Shiqiang Wei

2005-01-01

Abstract:Ge quantum dots were grown on Si(111), covered with 1.0 nm thick SiO2 film, by vacuum deposition. The Ge quantum dots were characterized with atomic force microscopy (ATM) and reflection high energy electron diffraction (RHEED). The results show that the substrate temperature and SiO2 thickness strongly affect Ge quantum dot growth. For instance, at a substrate temperature higher than 500°C, Ge atoms react with SiO2 and epitaxial Ge nanoparticles grow on Si(111). However, at 650°C, Ge nanoparticles do not form until Ge film thickness reaches 0.5 nm.