Abstract:We investigate the nanoheteroepitaxy of SiGe and Ge quantum dots (QDs) grown on nanotips substrates realized in Si(001) wafers. Due to the lattice strain compliance, enabled by the nanometric size of the tip and the limited dot/substrate interface area, which helps to reduce dot/substrate interdiffusion, the strain and SiGe composition in the QDs could be decoupled. This demonstrates a key advantage of the nanoheteroepitaxy over the Stranski-Krastanow growth mechanism. Nearly semi-spherical, defect-free, ∼100 nm wide SiGe QDs with different Ge contents were successfully grown on the nanotips with high selectivity and size uniformity. On the dots, thin dielectric capping layers were deposited, improving the optical properties by the passivation of surface states. Intense photoluminescence was measured from all samples investigated with emission energy, intensity, and spectral linewidth dependent on the SiGe composition of the QDs and the different capping layers. Radiative recombination occurs in the QDs, and its energy matches the results of band-structure calculations that consider strain compliance between the QD and the tip. The nanotips arrangement and the selective growth of QDs allow to studying the PL emission from only 3-4 QDs, demonstrating a bright emission and the possibility of selective addressing. These findings will support the design of optoelectronic devices based on CMOS-compatible emitters.

Photoluminescence of Ge quantum dots buried in silicon

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Structure and Photoluminescence of Ge Nanoparticles Embedded in SiO2 Gel Glasses Fabricated at Different Temperatures

Photoluminescence of Ge Nanoparticles Embedded in Sio2 Glasses Fabricated by A Sol-Gel Method

Visible Room-Temperature Photoluminescence of Ge-doped SiO2 Glasses Fabricated by a Sol–gel Process

Optical properties of Ge/Si quantum dot superlattices

Photoluminescence of Ge Quantum Dots Prepared on Porous Silicon by Ultrahigh Vacuum Chemical Vapor Deposition

Optical Characterization of Ge Quantum Dots Grown on Porous Silicon by UHV/CVD

Mcrostructure and Optical Properties of Ge(Si) Dots Grown on Si

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Self-organized germanium quantum dots grown by molecular beam epitaxy on Si(100)

Systematic Studies of the Photoluminescence of Ge Quantum Dots Grown on Strained Si(0.7)Ge(0.3) Buffer Layer

Interface Interdiffusion Intensified by Formation of Quantum Dots

Densely packed Ge quantum dots grown on SiO2/Si substrate☆

Silicon-based low dimensional quantum structure - self-assembly grown germanium quantum dots

Growth of Ge quantum dots on SiO2/Si(111) surface

Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence

Tunable Photoluminescence of Self-Assembled GeSi Quantum Dots by B+ Implantation and Rapid Thermal Annealing

Small-Size Ge/Si(001) Quantum Dots Grown By Molecular Boam Epitaxy

Thermally Oxidized Formation Of New Ge Dots Over As-Grown Ge Dots In The Si Capping Layer