Abstract:The dense domes of Ge quantum dots on Si （001） substrate with a monomodal morphology distribution are deposited at different temperatures by ion beam sputtering （IBS）. The areal density of the Ge quantum dots is observed to increase with elevating temperature, but the dots size to decrease. As the deposition temperature increases to 750 ℃ , the smaller Ge quantum dots each with a height of 14.5 nm and base width of 52.7 nm are obtained by sputtering 15 monolayer Ge coverage, and the dots areal density is up to 1.68 × 10^10 cm^-2 at the same time. Thus the evolution of Ge quantum dot prepared by IBS is very different from that by vapor deposition at thermal equilibrium condition. The stable shape and the size distribution are demonstrated to result from the kinetic behavior of the surface atoms which is restricted by the thermodynamic limitations. A mix-crystal interface including amorphous and crystal components is revealed by Raman spectrum, and this special interface is demonstrated to contribute to the high density of Ge quantum dots, since the boundaries between the two different components can provide more preferential centers for the nucleation. As the density increases at high deposition temperature, the elastic repulsion between islands is enhanced, resulting in the surface atoms growing along the orientation of high index during the IBS deposition, and inducing the increase in aspect ratio and the reduction in island size.

Interface Interdiffusion Intensified by Formation of Quantum Dots

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Small-Size Ge/Si(001) Quantum Dots Grown By Molecular Boam Epitaxy

Deposition of high-density Ge quantum dots on ultra-thin SiO2/Si(111) film surface

Structure and Optical Properties of Ge/Si Quantum Dots Formed by Driving the Evolution of Ge Thin Films Via Thermal Annealing

Ge/Si Interdiffusion In The Gesi Dots And Wetting Layers

Deposition of high-density Ge quantum dots on ultra-thin SiO2/Si(1 1 1) film surface

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Microstructure and optical response optimization of Ge/Si quantum dots transformed from the sputtering-grown Ge thin film by manipulating the thermal annealing.

Thermal Diffusion Effect of Self-Assembled Ge Quantum Dots Probed by Fluorescence X-ray Absorption Fine Structure

Growth of Ge quantum dots on SiO2/Si(111) surface

A Two-Stage Molecular Beam Epitaxial Growth Method to Fabricate Small and Uniform Ge Quantum Dots on Si(1 0 0)

The formation of intermediate layers in covered Ge/Si heterostructures with low-temperature quantum dots: a study using high-resolution transmission electron microscopy and Raman spectroscopy

Densely packed Ge quantum dots grown on SiO2/Si substrate☆

A two-stage molecular beam epitaxial growth method to fabricate small and uniform Ge quantum dots on Si(100)

Photoluminescence of Ge quantum dots buried in silicon

Optical properties of Ge/Si quantum dot superlattices

Growth of Ge Quantum Dot at the Mix-Crystal Interface Self-Induced on the Ion Beam Sputtering Deposition