Abstract:The silicon-rich SiN(x) films were fabricated on Si(100) substrate and quartz substrate at different substrate temperatures varying from room temperature to 400 degrees C by bipolar pulse ane RF magnetron co-sputtering deposition technique. After deposition, the films were annealed in a nitrogen atmosphere by rapid photothermal annealing at 1050 degrees C for 3 minutes. This thermal step allows the formation of the silicon quantum dots. Fourier transform infrared spectroscopy, Raman spectroscopy, grazing incidence X-ray diffraction and photoluminescence spectroscopy were used to analyze the bonding configurations, microstructures and luminescence properties of the films. The experimental results showed that: silicon-rich Si-N bonds were found in Fourier transform infrared spectra, suggesting that the silicon-rich SiN, films were successfully prepared; when the substrate temperature was not lower than 200 degrees C, the Raman spectra of the films showed the transverse optical mode of Si-Si vibration, while the significant diffraction peaks of Si(111) and Si(311) were shown in grazing incidence X-ray diffraction spectra, confirming the formation of silicon quantum dots; our work indicated that there was an optimal substrate temperature (300 degrees C), which could significantly increase the amount and the crystalline volume fraction of silicon quantum dots; three visible photoluminescence bands can be obtained for both 30 degrees C sample and 400 degrees C sample, and in combination with Raman results, the emission peaks were reasonably explained by using the quantum confinement effect and radiative recombination defect state of Si nanocrystals; the average size of the silicon quantum dots is 3.5 and 3.4 nm for the 300 degrees C sample and 400 degrees C sample, respectively. These results are useful for optimizing the fabrication parameters of silicon quantum dots embedded in SiN. thin films and have valuable implications for silicon based photoelectric device applications.

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Formation and Photoluminescence of Si Quantum Dots in Sio2/Si3n4 Hybrid Matrix for All-Si Tandem Solar Cells

Size-Dependent Optical Absorption of Silicon Nanocrystals Embedded in Sio2/Si3n4 Hybrid Matrix

Optical Characterisation of Silicon Nanocrystals Embedded in SiO2/Si3N4 Hybrid Matrix for Third Generation Photovoltaics.

Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells

Spectral Characteristics of Si Quantum Dots Embedded in Sinx Thin Films Prepared by Magnetron Co-Sputtering

Fabrication and Characterization of Silicon Quantum Dots in Si-rich Silicon Carbide Films.

Structure, Optical Property, And Reaction Process Of Si Quantum Dots Embedded In An Amorphous Silicon Carbide Matrix

Properties of Silicon Quantum Dots Embedded in Silicon Nitride Deposited by Magnetron Co-Sputtering

Photoluminescences and Structrue Performances of Si-Rich Silicon Nitride Thin Films Containing Si Quantum Dots

The Mechanism Of Formation And Photoluminescence Of Si Quantum Dots Embedded In Amorphous Sio2 Matrix

Synthesis and Optical Properties of Si-Rich Nitride Containing Silicon Quantum Dots

Multi-band Silicon Quantum Dots Embedded in an Amorphous Matrix of Silicon Carbide

Fabrication and Luminescence Properties of Si Quantum Dots Based on Si-Rich Sinx/N-Rich Siny Multilayer

In-situ fabricated amorphous silicon quantum dots embedded in silicon nitride matrix: Photoluminescence control and electroluminescence device fabrication

Highly luminescent Si quantum dots: new ways for size, position, and density control

Characteristics and Charge Storage of Silicon Quantum Dots Embedded in Silicon Nitride Film

Near infrared photoluminescence of Si1–xGex quantum dots fabricated by double hot Ge+/Si+ implantation into SiO2 layer

Correlations of Photoluminescence and Size Evolution of Si Quantum Dots in Amorphous Silicon Carbide

Photoluminescence Of Silicon Quantum Dots In Nanospheres

Si Quantum Dots Embedded in an Amorphous SiC Matrix : Nanophase Control by Non-Equilibrium Plasma Hydrogenation