Abstract:Silicon quantum dot (Si QD) tandem solar cell is a promising cell structure for realising high efficiency at low cost. The tandem solar cell effectively harnesses energy from the solar spectrum by stacking two or more cells together in the order of descending band gaps. Due to quantum confinement, the band gap of silicon based nanostructures such as Si QDs can be tailored by varying the size of the QDs. Solar cells and light emitting diodes based on Si QDs have been realised in experiments. However, current crowding due to high lateral resistance remains to be a major problem for Si QD devices grown on quartz substrates. Annealed silicon rich carbide (SRC), owing to its electrical conductivity, thermal stability and energy band gap compatible with Si QD cell fabrication, has the potential to overcome this problem. Further, this quasi-transparent thin-film can be used as either substrate or superstrate of a Si QD solar cell and therefore provides flexibility in cell structure design. Here, we investigate the physical, optical and electrical properties of the new material as functions of silicon concentration and doping conditions via a number of characterisation techniques including X-ray diffraction, Raman spectroscopy, ultraviolet-visible-infrared spectroscopy and four-point probe measurement. Some discoveries, including the lower crystallisation temperature of SiC within SRC, are also discussed. The research may provide some insight into the optimisation of annealed SRC as the new conductive material for Si QD solar cell and may boost the final arrival of all-silicon tandem solar cell.

Size-Dependent Electroluminescence From Si Quantum Dots Embedded In Amorphous Sic Matrix

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Formation and Photoluminescence of Si Quantum Dots in Sio2/Si3n4 Hybrid Matrix for All-Si Tandem Solar Cells

Structural and Electroluminescent Properties of Si Quantum Dots/sic Multilayers

Size-Dependent Optical Absorption of Silicon Nanocrystals Embedded in Sio2/Si3n4 Hybrid Matrix

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Improved Nanocrystal Formation, Quantum Confinement and Carrier Transport Properties of Doped Si Quantum Dot Superlattices for Third Generation Photovoltaics

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

Comparative Study of Electroluminescence from Annealed Amorphous Sic Single Layer and Amorphous Si/Sic Multilayers

In-situ fabricated amorphous silicon quantum dots embedded in silicon nitride matrix: Photoluminescence control and electroluminescence device fabrication

Silicon-quantum-dot Light-Emitting Diodes with Varying Emission Layer Thickness

Electroluminescent Devices Based on Amorphous SiN/Si Quantum Dots/amorphous SiN Sandwiched Structures

Electroluminescence with Micro-Watt Output from Ultra-Small Sized Si Quantum Dots/amorphous SiO2 Multilayers Prepared by Laser Crystallization Method

Efficient silicon quantum dots light emitting diodes with an inverted device structure

Light-emitting Diodes Based on Colloidal Silicon Quantum Dots

Size-dependent Photovoltaic Properties of Solar Cells Containing Si Quantum Dots/SiC Multilayers

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

Optimum Quantum Yield of the Light Emission from 2 to 10 Nm Hydrosilylated Silicon Quantum Dots

Experimental Study of the Influence of CH and H on the Conformation, Chemical Composition, and Luminescence of Silicon Quantum Dots Inlaid in Silicon Carbide Thin Films Grown by Remote Plasma-Enhanced Chemical Vapor Deposition.

Optical Properties of Amorphous Silicon Quantum Dots(a-Si QDs) with various dot size using Extended Hückel Theory

Quantum size effects and tunable visible photoluminescence in a-Si:H/nc-Si:H superlattices