Abstract:Impurity doping in silicon (Si) ultra-large-scale integration is one of the key challenges which prevent further device miniaturization. Using ultraviolet photoelectron spectroscopy and X-ray absorption spectroscopy in the total fluorescence yield mode, we show that the lowest unoccupied and highest occupied electronic states of ≤3 nm thick SiO2-coated Si nanowells shift by up to 0.2 eV below the conduction band and ca. 0.7 eV below the valence band edge of bulk silicon, respectively. This nanoscale electronic structure shift induced by anions at surfaces (NESSIAS) provides the means for low-nanoscale intrinsic Si (i-Si) to be flooded by electrons from an external (bigger, metallic) reservoir, thereby getting highly electron- (n-) conductive. While our findings deviate from the behavior commonly believed to govern the properties of silicon nanowells, they are further confirmed by the fundamental energy gap as per nanowell thickness when compared against published experimental data. Supporting our findings further with hybrid density functional theory calculations, we show that other group IV semiconductors (diamond, Ge) do respond to the NESSIAS effect in accord with Si. We predict adequate nanowire cross-sections (X-sections) from experimental nanowell data with a recently established crystallographic analysis, paving the way to undoped ultrasmall silicon electronic devices with significantly reduced gate lengths, using complementary metal-oxide-semiconductor-compatible materials.

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Quantum Confinement Energy in Nanocrystalline Silicon Dots from High-Frequency Conductance Measurement

Electrical characteristics of SiO2/crystalline Si quantum dots/SiO2 double-barrier diode

Ambipolar quantum dots in intrinsic silicon

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Charge Storage and Electron/light Emission Properties of Silicon Nanocrystals

Can Single Electron Effects Be Directly Observed in Si Quantum Dots Array at Room Temperature?

Low Temperature Investigation of Electrical Conduction in Polysilicon: Simulation and Experiment

Electron Trapping, Storing, and Emission in Nanocrystalline Si Dots by Capacitance–voltage and Conductance–voltage Measurements

Room Temperature Electron Tunneling and Storage in a Nanocrystalline Silicon Floating Gate Structure

Size-Dependent Electroluminescence From Si Quantum Dots Embedded In Amorphous Sic Matrix

On the Cooling of Electrons in a Silicon Inversion Layer

Room-temperature single-electron tunneling in highly-doped silicon-on-insulator nanoscale field-effect transistors

Efficient Exciton Transport in Strongly Quantum-Confined Silicon Quantum Dots

Native surface oxidation yields SiC-SiO2 core-shell quantum dots with improved quantum efficiency

Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO 2 Multilayers

Turning Low-Nanoscale Intrinsic Silicon Highly Electron-Conductive by SiO2 Coating

Characterization of a nanocrystal metal-oxide-semiconductor field effect transistor(MOSFET)

Transport and electrical properties of Si and Ge quantum dots embedded in oxide layers of MOS structures for optoelectronic applications