Abstract:The optical and electrical properties of phosphorus doped silicon carbide thin films with various C /Si ratio were studied before and after thermally annealing .It is found that with decreasing the C/Si ratio for as‐deposited samples ,the optical band gap is gradually decreased and dark conductivity increased accordingly .As high as 6 to 7 orders of magnitude of material dark conductivity improvement is a remarkable result of 1000 ℃ annealing .With de‐creasing the C/Si ratio for annealed samples ,the Si-C bond density is decreased in company with the enhancement of crystal degree and optical band gap ,and also with improvements of main carrier mobility as well as dark conductivity .Besides ,influences of the C/Si ratio to the phosphorus dopant activation effect and to the material con‐ductivity activation energy are also significant .The dopant activation effect changes in the form of the carrier concen‐tration ,which increases firstly and then decreases slightly with reducing the C/Si ratio ,representing a close relation to the crystal degree .Furthermore ,the conductivity activation energy of annealed samples is reduced with decreasing the C/Si ratio ,the Fermi level consequently rises very close to the bottom of the conduction band or even enters into the conduction band ,indicating the formation of heavily doped semiconductor materials .

Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO 2 Multilayers

Temperature-dependent carrier transport behaviors in phosphorus-doped silicon nanocrystals/silicon carbide multilayers

Experimental Observations on Metal-Like Carrier Transport and Mott Hopping Conduction Behaviours in Boron-Doped Si Nanocrystal Multilayers

Measurement of Electron-Density and Mobility in P-Doped A-Si-H and Mc-Si-H Films

Carrier Transport of Doped Nanocrystalline Si Formed by Annealing of Amorphous Si Films at Various Temperatures

Enhanced carrier mobility in Si nano-crystals via nanoscale phosphorus doping

Formation of High Conductive Nano-Crystalline Silicon Embedded in Amorphous Silicon-Carbide Films with Large Optical Band Gap

The Change Of Electronic Transport Behaviors By P And B Doping In Nano-Crystalline Silicon Films With Very High Conductivities

Phosphorus Doping in Si Nanocrystals/SiO2 Multilayers and Light Emission with Wavelength Compatible for Optical Telecommunication.

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Size-dependent Phosphorus Doping Effect in Nanocrystalline-Si-based Multilayers

Formation and Electrical Properties of High Conductively Doped Nanocrystalline Silicon Embedded in Amorphous Silicon Carbide

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

The Carrier Transport Properties of B-Doped Si Nanocrystal Films with Various Doping Concentrations

Isotope Doping-Induced Crossover Shift in the Thermal Conductivity of Thin Silicon Nanowires.

High-conductive Nanocrystalline Silicon with Phosphorous and Boron Doping

Doping Si Nanocrystals Embedded in Sio2 with P in the Framework of Density Functional Theory

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

Comparative Study on P and B Doped Nano-Crystalline Si Multilayers

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Doping silicon nanocrystals with boron and phosphorus