Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO 2 Multilayers

Mingqing Qian,Dan Shan,Yang Ji,Dongke Li,Jun Xu,Wei Li,Kunji Chen
DOI: https://doi.org/10.1186/s11671-016-1561-z
2016-01-01
Nanoscale Research Letters
Abstract:High-conductive phosphorus-doped Si nanocrystals/SiO 2 (nc-Si/SiO 2 ) multilayers are obtained, and the formation of Si nanocrystals with the average crystal size of 6 nm is confirmed by high-resolution transmission electron microscopy and Raman spectra. The temperature-dependent carrier transport behaviors of the nc-Si/SiO 2 films are systematically studied by which we find the shift of Fermi level on account of the changing P doping concentration. By controlling the P doping concentration in the films, the room temperature conductivity can be enhanced by seven orders of magnitude than the un-doped sample, reaching values up to 110 S/cm for heavily doped sample. The changes from Mott variable-range hopping process to thermally activation conduction process with the temperature are identified and discussed.
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