Abstract:The optical and electrical properties of phosphorus doped silicon carbide thin films with various C /Si ratio were studied before and after thermally annealing .It is found that with decreasing the C/Si ratio for as‐deposited samples ,the optical band gap is gradually decreased and dark conductivity increased accordingly .As high as 6 to 7 orders of magnitude of material dark conductivity improvement is a remarkable result of 1000 ℃ annealing .With de‐creasing the C/Si ratio for annealed samples ,the Si-C bond density is decreased in company with the enhancement of crystal degree and optical band gap ,and also with improvements of main carrier mobility as well as dark conductivity .Besides ,influences of the C/Si ratio to the phosphorus dopant activation effect and to the material con‐ductivity activation energy are also significant .The dopant activation effect changes in the form of the carrier concen‐tration ,which increases firstly and then decreases slightly with reducing the C/Si ratio ,representing a close relation to the crystal degree .Furthermore ,the conductivity activation energy of annealed samples is reduced with decreasing the C/Si ratio ,the Fermi level consequently rises very close to the bottom of the conduction band or even enters into the conduction band ,indicating the formation of heavily doped semiconductor materials .

Formation of High Conductive Nano-Crystalline Silicon Embedded in Amorphous Silicon-Carbide Films with Large Optical Band Gap

Formation and Electrical Properties of High Conductively Doped Nanocrystalline Silicon Embedded in Amorphous Silicon Carbide

Measurement of Electron-Density and Mobility in P-Doped A-Si-H and Mc-Si-H Films

Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

High-conductive Nanocrystalline Silicon with Phosphorous and Boron Doping

Annealing Effect on Optical and Electronic Properties of Silicon Rich Amorphous Silicon-Carbide Films

Highly Conductive p-Type Silicon Carbon Alloys Deposited by Hot-Wire Chemical Vapor Deposition

Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO 2 Multilayers

Temperature-dependent carrier transport behaviors in phosphorus-doped silicon nanocrystals/silicon carbide multilayers

Carrier Transport of Doped Nanocrystalline Si Formed by Annealing of Amorphous Si Films at Various Temperatures

The Change Of Electronic Transport Behaviors By P And B Doping In Nano-Crystalline Silicon Films With Very High Conductivities

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

Density functional theory study on a 1.4 nm silicon nanocrystal coated with carbon

The Carrier Transport Properties of B-Doped Si Nanocrystal Films with Various Doping Concentrations

Deposition and Thermoelectric Properties of N-Doped SiC Thick Films

The Nc-Si Films With Controlled Crystal Structure And Electrical Conductivity Via The Re-Crystallization Approach

Improved Device Performance of Si-based Heterojunction Solar Cells by Using Phosphorus Doped Si Nanocrystals Embedded in SiC Host Matrix

Enhanced carrier mobility in Si nano-crystals via nanoscale phosphorus doping

Comparative Study on P and B Doped Nano-Crystalline Si Multilayers

Electronic Properties and Charge Storage Effect of Amorphous SiN Passivated Nanocrystalline Silicon

Experimental Observations on Metal-Like Carrier Transport and Mott Hopping Conduction Behaviours in Boron-Doped Si Nanocrystal Multilayers