Abstract:The creation of multiple emission pathways in quantum dots (QDs) is an exciting prospect with fundamental interest and optoelectronic potential. For the first time, we report multiple emission pathways in semiconductor nanocrystals (NCs) where the number of emission pathways desired is controlled by the number of dopant atoms per quantum dot. The origin of additional emission pathways is explained by interactions between dopant states and NC energy levels. Density functional theory (DFT) calculations of undoped 2.3 nm silicon (Si NCs) and the same NCs doped with 2 interstitial Cu atoms show good agreement to experiment. Such calculations provide valuable data to explain the changes in optical transitions due to the Cu dopant in terms of transition energies, quantum yield and dopant position as a function of dopants per NC. Changes in the optical properties of Si NCs induced by dopant concentration include extended excitation range and enhanced absorption coefficients, emission redshifts of up to 60 nm, and a two-fold increase in quantum yields up to 22%. The optical properties of doped NCs lead to significant bioimaging improvements illustrated by in vitro cell imaging, including redshifted excitation wavelengths away from natural autofluorescence and enhanced fluorescent signals.

Comparative Study on P and B Doped Nano-Crystalline Si Multilayers

Synthesis, Optical Properties And Theoretical Modelling Of Discrete Emitting States In Doped Silicon Nanocrystals For Bioimaging

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Study on solid-phase crystallization of B-doped a-Si:H film

Comparative study on the localized surface plasmon resonance of boron- and phosphorus-doped silicon nanocrystals.

Doping silicon nanocrystals with boron and phosphorus

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

The Carrier Transport Properties of B-Doped Si Nanocrystal Films with Various Doping Concentrations

Doping Effect in Si Nanocrystals/SiO2 Multilayers

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals

Doping Si Nanocrystals Embedded in Sio2 with P in the Framework of Density Functional Theory

The Phosphorus and Boron Co-Doping Behaviors at Nanoscale in Si Nanocrystals/Sio2 Multilayers

Measurement of Electron-Density and Mobility in P-Doped A-Si-H and Mc-Si-H Films

Experimental Observations on Metal-Like Carrier Transport and Mott Hopping Conduction Behaviours in Boron-Doped Si Nanocrystal Multilayers

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

High-conductive Nanocrystalline Silicon with Phosphorous and Boron Doping

Size-dependent Phosphorus Doping Effect in Nanocrystalline-Si-based Multilayers

Lightly boron and phosphorus co-doped silicon nanocrystals