Doping Si Nanocrystals Embedded in Sio2 with P in the Framework of Density Functional Theory

Zhenyi Ni,Xiaodong Pi,Deren Yang

DOI: https://doi.org/10.1103/physrevb.89.035312

IF: 3.7

2014-01-01

Physical Review B

Abstract:Despite the popularity of doping silicon nanocrystals (Si NCs) embedded in silicon dioxide (SiO2), theoretical understanding on the doping of Si NCs has been nearly all directed to hydrogen-passivated freestanding Si NCs. Now we simulate the doping of Si NCs embedded in SiO2 by constructing Si@SiO2 models in which Si NCs are completely covered by a thin layer of SiO2. In the framework of density functional theory, we investigate the locations of P, the binding energies of P, the energy-level schemes, and the radiative recombination for P-doped Si NCs embedded in SiO2. It is found that a dangling bond at the Si/SiO2 interface makes a difference for the doping of a Si NC with P. The P doping of Si NCs embedded in SiO2 vastly differs from that of Si NCs passivated by hydrogen.