Abstract:Understanding the distributions and behaviors of dopants in Si nanocrystal are the primary and necessary issues to realize the controllable doping at nanoscale and develop the next generation of optoelectronic devices. This work reports the atomic-scale distributions of phosphorus and boron dopants in Si nanocrystals multilayers. The phosphorus-doped and boron-doped Si nanocrystals/SiO2 multilayers are fabricated by PECVD and subsequently annealed at 1000 °C. It is found that the locations of phosphorus are redistributed after the formation of Si nanocrystals due to the combined effects of formation energy and self-purification. Phosphorus dopants are mainly distributed at the Si nanocrystals surfaces to passivate the dangling bonds, while part of them incorporate into Si nanocrystals lattice sites to provide free electrons. However, boron dopants exhibit different distributions in contrast to phosphorus. The concentration of boron on Si nanocrystals surfaces can reach as high as 40.0 at. %, which forms a dopant-shell covering on Si nanocrystals. Meanwhile, the boron dopant-shell can modify the surface states of Si nanocrystals like Si-oxide related emission centers and dangling bonds, which is responsible for the luminescence properties. Moreover, the boron-aggregations with concentration near 74.8 at. % are appeared inside Si nanocrystals and led to the damage of crystalline lattice.

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Doping silicon nanocrystals with boron and phosphorus

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

The Phosphorus and Boron Co-Doping Behaviors at Nanoscale in Si Nanocrystals/Sio2 Multilayers

Nanoscale Characterization of Active Doping Concentration in Boron‐Doped Individual Si Nanocrystals

Ligand-Free, Colloidal, and Plasmonic Silicon Nanocrystals Heavily Doped with Boron

Doping Si Nanocrystals Embedded in Sio2 with P in the Framework of Density Functional Theory

Comparative study on the localized surface plasmon resonance of boron- and phosphorus-doped silicon nanocrystals.

Lightly boron and phosphorus co-doped silicon nanocrystals

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Atomic-scale study on the dopant distribution in phosphorus and boron-doped Si nanocrystals/SiO2 multilayers

Nonthermal Plasma Synthesized Boron-Doped Germanium Nanocrystals

Effects of doping concentration on the microstructural and optoelectrical properties of boron doped amorphous and nanocrystalline silicon films

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD