Abstract:<p>As the most fundamental material for microelectronics, silicon (Si) has bourgeoned in the past more than half a century. However, given the indirect bandgap of Si, the use of Si in optoelectronics is relatively limited due to its mediocre optical absorption and rather poor optical emission. During many years of efforts for extending the use of Si in optoelectronics Si nanocrystals (NCs) that are one type of the most important Si nanostructures have attracted significant attention owing to their remarkable electronic and optical properties. Si NCs are actually crystalline Si nanoparticles, which may be called Si quantum dots if their size is smaller than ∼10 nm. With the manipulation of the size, surface and doping of Si NCs great tunability for the light emission from Si NCs with the quantum yield of more than 60% has been realized. Based on the efficient light emission from Si NCs high-performance Si-NC light-emitting devices have been demonstrated. In the meantime, the efficient light emission from Si NCs has also been utilized for synaptic simulations in neuromorphic computing and down-shifting in photovoltaics. Broadband optical absorption ranging from the ultraviolet to mid-infrared has been recently obtained for Si NCs mainly by taking advantage of doping. This has enabled the use of Si NCs in novel solar cells, photodetectors and optoelectronic synaptic devices. The continuous improvement of the electronic and optical properties of Si NCs has made Si NCs unfading Si materials for optoelectronics, contributing to the development of Si-based optoelectronic integration.</p>

Silicon Nanocrystals: Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals (advanced Optical Materials 5/2016)

Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

Synthesis, Optical Properties And Theoretical Modelling Of Discrete Emitting States In Doped Silicon Nanocrystals For Bioimaging

Size-Dependent Optical Absorption of Silicon Nanocrystals Embedded in Sio2/Si3n4 Hybrid Matrix

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Broadband Tunable Mid-infrared Plasmon Resonances in Cadmium Oxide Nanocrystals Induced by Size-dependent Nonstoichiometry.

Ligand-Free, Colloidal, and Plasmonic Silicon Nanocrystals Heavily Doped with Boron

Comparative study on the localized surface plasmon resonance of boron- and phosphorus-doped silicon nanocrystals.

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals

Doping silicon nanocrystals with boron and phosphorus

Lightly boron and phosphorus co-doped silicon nanocrystals

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

Tight-Binding Calculations Of The Optical Response Of Optimally P-Doped Si Nanocrystals: A Model For Localized Surface Plasmon Resonance

Silicon Nanocrystals Doped with Substitutional or Interstitial Manganese

Fluorine-Passivated Silicon Nanocrystals: Surface Chemistry Versus Quantum Confinement

Optical Absorption and Emission of Nitrogen-Doped Silicon Nanocrystals

Optical Constants and Band Gap Expansion of Size Controlled Silicon Nanocrystals Embedded in SiO2 Matrix

Optical extinction spectra of silicon nanocrystals: size dependence upon the lowest direct transition

Study on Luminescence Quenching of Ultra-Small Silicon Nanocrystals Due to Boron Doping

Silicon nanocrystals: unfading silicon materials for optoelectronics