Abstract:The creation of multiple emission pathways in quantum dots (QDs) is an exciting prospect with fundamental interest and optoelectronic potential. For the first time, we report multiple emission pathways in semiconductor nanocrystals (NCs) where the number of emission pathways desired is controlled by the number of dopant atoms per quantum dot. The origin of additional emission pathways is explained by interactions between dopant states and NC energy levels. Density functional theory (DFT) calculations of undoped 2.3 nm silicon (Si NCs) and the same NCs doped with 2 interstitial Cu atoms show good agreement to experiment. Such calculations provide valuable data to explain the changes in optical transitions due to the Cu dopant in terms of transition energies, quantum yield and dopant position as a function of dopants per NC. Changes in the optical properties of Si NCs induced by dopant concentration include extended excitation range and enhanced absorption coefficients, emission redshifts of up to 60 nm, and a two-fold increase in quantum yields up to 22%. The optical properties of doped NCs lead to significant bioimaging improvements illustrated by in vitro cell imaging, including redshifted excitation wavelengths away from natural autofluorescence and enhanced fluorescent signals.

Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

Silicon Nanocrystals: Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals (advanced Optical Materials 5/2016)

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Ligand-Free, Colloidal, and Plasmonic Silicon Nanocrystals Heavily Doped with Boron

Synthesis, Optical Properties And Theoretical Modelling Of Discrete Emitting States In Doped Silicon Nanocrystals For Bioimaging

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Doping silicon nanocrystals with boron and phosphorus

Comparative study on the localized surface plasmon resonance of boron- and phosphorus-doped silicon nanocrystals.

Lightly boron and phosphorus co-doped silicon nanocrystals

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals

Broadband Tunable Mid-infrared Plasmon Resonances in Cadmium Oxide Nanocrystals Induced by Size-dependent Nonstoichiometry.

Nanoscale Characterization of Active Doping Concentration in Boron‐Doped Individual Si Nanocrystals

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Study on Luminescence Quenching of Ultra-Small Silicon Nanocrystals Due to Boron Doping

Size-Dependent Optical Absorption of Silicon Nanocrystals Embedded in Sio2/Si3n4 Hybrid Matrix

Tight-Binding Calculations Of The Optical Response Of Optimally P-Doped Si Nanocrystals: A Model For Localized Surface Plasmon Resonance

Size-dependent Phosphorus Doping Effect in Nanocrystalline-Si-based Multilayers

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals