Abstract:Nanogermanium is a material that has great potential for technological applications, and doped and alloyed Ge nanocrystals (NCs) are actively being considered. New alloys and compositions are possible in colloidal synthesis because the reactions are kinetically rather than thermodynamically controlled. Most of the Group V elements have been shown to be n-type dopants in Ge to increase carrier concentration; however, thermodynamically, Bi shows no solubility in crystalline Ge. Bi-doped Ge NCs were synthesized for the first time in a microwave-assisted solution route. The oleylamirie capping ligand can be replaced by dodecanethiol without loss of Bi. A positive correlation between the lattice parameter and the concentration of Bi content (0.5-2.0 mol %) is shown via powder X-ray diffraction and selected area electron diffraction. X-ray photoelectron spectroscopy, transmission electron microscopy (TEM), scanning TEM, and inductively coupled plasma-mass spectroscopy are consistent with the Bi solubility up to 2 mol %. The NC size increases with increasing amount of bismuth iodide employed in the reaction. Absorption data show that the band gap of the Bi-doped Ge NCs is consistent with the NC size. This work shows that a new element can be doped into Ge NCs via a microwave assisted route in amounts as high as 1-2 mol %, which leads to increased carriers. Colloidal chemistry provides an inroad to new materials not accessible via other means.

Nonthermal Plasma Synthesized Boron-Doped Germanium Nanocrystals

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals

Density Functional Theory Study on the Boron and Phosphorus Doping of Germanium Quantum Dots

Doping silicon nanocrystals with boron and phosphorus

Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

Bismuth Doping of Germanium Nanocrystals Through Colloidal Chemistry

Ligand-Free, Colloidal, and Plasmonic Silicon Nanocrystals Heavily Doped with Boron

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Impact of Germanium Co-Doping on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon

Effect of Germanium Codoping on the Grown‐In Oxide Precipitates in Nitrogen‐Doped Czochralski Silicon

Germanium-doped Crystalline Silicon: Effects of Germanium Doping on Boron-Related Defects

In Situ Boron (B) Doped Germanium (ge:B) Grown on (100), (110), and (111) Silicon: Crystal Orientation and B Incorporation Effects

Doped Silicon Nanoparticles Synthesized by Nonthermal Plasma

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Lightly boron and phosphorus co-doped silicon nanocrystals