Abstract:Silicon nanoparticles (Si NPs) synthesized in non-thermal plasma with silicon tetrachloride (SiCl4) are anticipated as a non-toxic and inexpensive Si source for important applications. This study examines the crystallinity, yield, and size distribution of Si NPs in terms of specific energy input (SEI) for 2.5-65 J cm(-3) and the H-2/SiCl4 ratio (1-10). The particle growth mechanism is discussed comprehensively. Atomic hydrogen (H) production using non-thermal plasma is the primary important step for SiCl4 dechlorination at low temperatures. The Si NP yield increases with SEI (plasma power divided by total gas flow) because SiCl4 conversion increases with energy fed into the unit volume of the feed gas. At low SEI, Si NPs were mostly in amorphous material because of insufficient plasma heating. A maximum yield of 50 wt% was obtained when SEI = 10 J cm(-3) (H-2/SiCl4 = 10) with a crystal fraction of about 1%. Increased SEI is necessary to improve crystal fraction, but excessive SEI decreases the NP yield remarkably. The NP yield losses correspond to increasing NP-free thin film growth on the reactor wall. Mass spectrometry shows that SiCl4 is highly decomposed with greater SEI. Hydrogen chloride (HCl) increases as a by-product. At higher SEI, particle nucleation and subsequent growth are suppressed.

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Comparative study on the localized surface plasmon resonance of boron- and phosphorus-doped silicon nanocrystals.

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First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

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A parametric study of non-thermal plasma synthesis of silicon nanoparticles from a chlorinated precursor

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Doping Silicon Wafers with Boron by Use of Silicon Paste

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