Abstract:Thermal boron diffusion, which forms highly doped and shallow p-emitters on phosphor-doped silicon wafers, is one of the primary processes in commercial-scale production of n-type cells. Here, we report on the use of nontoxic and nonvolatile borosiloxane sols as the spin-on boron source. In comparison to the tribromide (BBr 3 ) boron diffusion that is applied in the production of most commercial n-type cells, borosiloxane boron diffusion may have potential advantages in terms of cost, safety, operability, etc. The borosiloxane sols studied here were formed from a cross-linking reaction between boron acid and a mixture of two types of silicon alkoxides, methyltriethoxysilane (MTEOS) and dimethyldiethoxysilane (DMDEOS). The MTEOS/DMDEOS ratio was found to be the key factor determining the synthetic period, net structure, thermal transformation property, and coating behavior of the borosiloxane sols. In combination with the spin-coating method, the performance of borosiloxane boron diffusion into phosphor-doped silicon wafers (1–3 Ω·cm) was systematically investigated by varying the borosiloxane composition (boron/silicon or MTEOS/DMDEOS ratio) and the diffusion process parameters (temperature, ambience, and period of individual sub-steps), and by relating them to the resulting sheet resistance and boron doping profile. The results show that under the diffusion conditions in conventional cell production lines, the formed p-emitters can have variable sheet resistance in the range of 35–582 Ω/□ and boron doping depth of 100–300 nm.

Doping Silicon Wafers with Boron by Use of Silicon Paste

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

Doping silicon nanocrystals with boron and phosphorus

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Doped Silicon Nanoparticles Synthesized by Nonthermal Plasma

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Ex situ vapor phase boron doping of silicon nanowires using BBr3

Boron Spin-On Doping for Poly-Si/SiO x Passivating Contacts

Superb improvement of boron doping in selective emitter for TOPCon solar cells via boron-doped silicon paste

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

N-Type Area of PN Junction Etched in BOE Solution

Boron-Doped Silicon Nanowires Grown by Plasma-Enhanced Chemical Vapor Deposition

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Borosiloxane boron diffusion for p-emitter formation on n-type silicon wafers

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals

Full Activation of Boron in Silicon Doped by Self-Assembled Molecular Monolayers

Doping of Phosphorus and Boron into Silicon by Solid-Phase Diffusion at Low Temperatures ( <650° C)

Ligand-Free, Colloidal, and Plasmonic Silicon Nanocrystals Heavily Doped with Boron

Stabilization of Boron Carbide Via Silicon Doping