Abstract:There is provided a method of fabricating a surround gate silicon nanowire transistor with air as the side wall. The method comprises: isolating and deposition of material A with a high etching selectivity ratio with respect to Si. Fotolithografieren for defining a fin strip hard mask. Etching of material A to form the fin strip hard mask. Implanting source and drain. To define Fotolithografieren a channel area and a large source / drain region. Forming the Si-fin strip and the large source / drain. Removing the hard mask material A. forming a nanowire. Etching of SiO Forming a gate oxide layer. Depositing polysilicon. Ion implantation in polysilicon. Annealing for activating the impurities. Etching the polysilicon. Deposition of SiN. Fotolithografieren to define a gate line. Etching the SiN and polysilicon to form the gate line. Separating the source / drain from the gate, and filling the area between them with air. Depositing SiO Annealing treatment for densifying the SiO and completing the fabrication of the device using the following processes. The method is compatible with CMOS technology processes, the introduction of the air side wall effectively reduce the parasitic capacitance of the device can improve the transient response of the device and is suitable for use in high performance logic circuits.

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