Abstract:Semiconductor p-n junctions are essential building blocks of electronic and optoelectronic devices. Although vertical p-n junction structures can be formed readily by growing in sequence, lateral p-n junctions normal to surface direction can only be formed on specially patterned substrates or by post-growth implantation of one type of dopant while protecting the oppositely doped side. In this study, we report the monolithic formation of lateral p-n junctions in GaAs nanowires (NWs) on a planar substrate sequentially through the Au-assisted vapor-liquid-solid selective lateral epitaxy using metalorganic chemical vapor deposition. p-type and n-type segments are formed by modulating the gas phase flow of p-type (diethylzinc) and n-type (disilane) precursorsin situduring nanowire growth, allowing independent sequential control of p- and n-doping levels self-aligned in-plane in a single growth run. The p-n junctions formed are electrically characterized by fabricating arrays of p-n junction NW diodes with coplanar ohmic metal contacts and two-terminalI-Vmeasurements. The lateral p-n diode exhibits a 2.15 ideality factor and a rectification ratio of ∼106. The electron beam-induced current measurement confirms the junction position. The extracted minority carrier diffusion length is much higher compared to those previously reported, suggesting a low surface recombination velocity in these lateral NWp-n diodes.

Fabrication of Large‐Area Silicon Nanowire P–n Junction Diode Arrays

Fabrication and Properties of Large-Area Silicon Nanowire Arrays

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication.

Silicon Nano-Wire Fabricated by Boe Silicon Etching

N-Type Area of PN Junction Etched in BOE Solution

Monolithic lateral p-n junction GaAs nanowire diodes via selective lateral epitaxy

Synthesis of Large-Area Silicon Nanowire Arrays Via Self-Assembling Nanoelectrochemistry

FABRICATION OF SILICON NANOWIRE (SiNW) ARRAYS AND APPLICATION IN SOLAR CELL

FABRICATION OF LARGE-AREA SILICON NANOWIRE ARRAYS FOR SOLAR CELLS

Fabrication and Electrical Properties of Axial and Radial GaAs Nanowire Pn Junction Diode Arrays

P-N Crossed Nanojunctions from Electroless-Etched Si Nanowires

Fabrication of Silicon Nanowire Arrays with Controlled Diameter, Length, and Density

OS1503 Development of Highly Ordered Silicon Nanowire Array

Wafer-scale Fabrication of Silicon Nanowire Arrays with Controllable Dimensions

Fabrication of Conducting Si Nanowire Arrays

Extended Arrays of Vertically Aligned Sub-10 Nm Diameter [100] Si Nanowires by Metal-Assisted Chemical Etching

Large-area Ordered P-type Si Nanowire Arrays As Photocathode for Highly Efficient Photoelectrochemical Hydrogen Generation.

Fabrication and Electrical and Photosensitive Properties of Silicon Nanowire P-N Homojunctions

Wafer-scale high-throughput ordered arrays of Si and Coaxial Si/Si 1- xGex wires: Fabrication, characterization, and photovoltaic application

Design and fabrication of wafer-scale highly uniform silicon nanowire arrays by metal-assisted chemical etching for antireflection films

Fabrication of antireflective silicon nanowires array