Abstract:A method was developed to grow ordered silicon nanowire with NiSi(2) tip arrays by reacting nickel thin films on silica-coated ordered Si nanowire (NW) arrays. The coating of thin silica shell on Si NW arrays has the effect of limiting the diffusion of nickel during the silicidation process to achieve the single crystalline NiSi(2) NWs. In the meantime, it relieves the distortion of the NWs caused by the strain associated with formation of NiSi(2) to maintain the straightness of the nanowire and the ordering of the arrays. Other nickel silicide phases such as Ni(2)Si and NiSi were obtained if the silicidation processes were conducted on the ordered Si NWs without a thin silica shell. Excellent field emission properties were found for NiSi(2)/Si NW arrays with a turn on field of 0.82 V µm(-1) and a threshold field of 1.39 V µm(-1). The field enhancement factor was calculated to be about 2440. The stability test showed a fluctuation of about 7% with an applied field of 2.6 V µm(-1) for a period of 24 h. The excellent field emission characteristics are attributed to the well-aligned and highly ordered arrangement of the single crystalline NiSi(2)/Si heterostructure field emitters. In contrast to other growth methods, the present growth of ordered nickel silicide/Si NWs on silicon is compatible with silicon nanoelectronics device processes, and also provides a facile route to grow other well-aligned metal silicide NW arrays. The advantages will facilitate its applications as field emission devices.

Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil.

Ultrafast growth of single-crystalline Si nanowires

An Ordered Si Nanowire with NiSi2 Tip Arrays As Excellent Field Emitters.

Well-Aligned Nisi/Si Heterostructured Nanowire Arrays As Field Emitters

Phase-controlled Synthesis of Nickel Silicide Nanostructures

Direct Growth of Ni2Si Nanowire Array Electrodes for High-performance Reversible Lithium-ion Batteries

Controlling Growth And Field Emission Properties Of Silicon Nanotube Arrays By Multistep Template Replication And Chemical Vapor Deposition

A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

Field emission of comb-like chromium disilicide nanowires prepared by an in situ chloride-generated route

Field Emission Study Of Sic Nanowires/Nanorods Directly Grown On Sic Ceramic Substrate

Aligned SiC Porous Nanowire Arrays with Excellent Field Emission Properties Converted from Si Nanowires on Silicon Wafer

Morphology-Controlled Growth of Chromium Silicide Nanostructures and Their Field Emission Properties

Three-dimensional Branched SiC Nanowire Field Emitters with Single-Crystal Integrated Structures and Increased Emission Sites: Ultralow Turn-on Field and High Stability

Growth of Nickel Films on the Surface of Silicon Nanowire

Sulfide-assisted Growth of Silicon Nano-Wires by Thermal Evaporation of Sulfur Powders

Preparation, superior field emission properties and first principles calculation of electronic structure of SiC nanowire arrays on Si substrate

Self-Assembled Zns Nanowire Arrays: Synthesis, in Situ Cu Doping and Field Emission

Silicon Nanowires, Catalytic Growth and Electrical Characterization

Tunable field emission properties of well-aligned silicon nanowires with controlled aspect ratio and proximity

Controlled growth of SiC flexible field emitters with clear and sharp tips

Solid-State Limited Nucleation of NiSi/SiC Core-Shell Nanowires by Hot-Wire Chemical Vapor Deposition