Abstract:A method was developed to grow ordered silicon nanowire with NiSi(2) tip arrays by reacting nickel thin films on silica-coated ordered Si nanowire (NW) arrays. The coating of thin silica shell on Si NW arrays has the effect of limiting the diffusion of nickel during the silicidation process to achieve the single crystalline NiSi(2) NWs. In the meantime, it relieves the distortion of the NWs caused by the strain associated with formation of NiSi(2) to maintain the straightness of the nanowire and the ordering of the arrays. Other nickel silicide phases such as Ni(2)Si and NiSi were obtained if the silicidation processes were conducted on the ordered Si NWs without a thin silica shell. Excellent field emission properties were found for NiSi(2)/Si NW arrays with a turn on field of 0.82 V µm(-1) and a threshold field of 1.39 V µm(-1). The field enhancement factor was calculated to be about 2440. The stability test showed a fluctuation of about 7% with an applied field of 2.6 V µm(-1) for a period of 24 h. The excellent field emission characteristics are attributed to the well-aligned and highly ordered arrangement of the single crystalline NiSi(2)/Si heterostructure field emitters. In contrast to other growth methods, the present growth of ordered nickel silicide/Si NWs on silicon is compatible with silicon nanoelectronics device processes, and also provides a facile route to grow other well-aligned metal silicide NW arrays. The advantages will facilitate its applications as field emission devices.

Tunable field emission properties of well-aligned silicon nanowires with controlled aspect ratio and proximity

Synthesis Of Taperlike Si Nanowires With Strong Field Emission

Well-Aligned Nisi/Si Heterostructured Nanowire Arrays As Field Emitters

An Ordered Si Nanowire with NiSi2 Tip Arrays As Excellent Field Emitters.

Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil.

The dopant (n- and p-type), band gap, and size-dependent field electron emission induced from silicon nanowires

Raman spectroscopy and field electron emission properties of aligned silicon nanowire arrays

Field emission enhancement of Au-Si nano-particle-decorated silicon nanowires

Vertically Well-Aligned Epitaxial Ni(31)Si(12) Nanowire Arrays With Excellent Field Emission Properties

Three-dimensional Branched SiC Nanowire Field Emitters with Single-Crystal Integrated Structures and Increased Emission Sites: Ultralow Turn-on Field and High Stability

Fabrication of Vertically Aligned Si Nanowires and Their Application in A Gated Field Emission Device

Tunable Synthesis of Carbon Nanosheet/silicon Nanowire Hybrids for Field Emission Applications

Field emission properties of ultra-high density vertical aligned silicon nanowires

Aligned SiC Porous Nanowire Arrays with Excellent Field Emission Properties Converted from Si Nanowires on Silicon Wafer

Enhanced Field Emission of Au Nanoparticle-Decorated SiC Nanowires

Nanoparticle-density-dependent Field Emission of Surface-Decorated SiC Nanowires

Fabrication of highly oriented 4H-SiC gourd-shaped nanowire arrays and their field emission properties

Quantification of Deviation of Size Dependent Field Enhancement Factor of Silicon Nanowires Array through Theoretical Modeling

Electron Field Emission from Silicon Nanowires

Fabrication and Field Emission Properties of Multi-Walled Carbon Nanotube/silicon Nanowire Array

Field emission property of aligned and random SiC nanowires arrays synthesized by a simple vapor–solid reaction