Abstract:Integrated field emission electron sources with low driving voltage are desired for micro/nano vacuum electronics. Herein, we demonstrate the enhanced and stable electron emission from crystalline gold–silver (Au–Ag) alloy nanoparticle capped Si nanowires (SiNWs) and the achieved gated electron sources with low driving voltage (<50 V). Thermally induced self-assembly hemispherical (50–80 nm) crystalline Au–Ag nanoparticles were prepared and used as masks in plasma etching to form vertically aligned high aspect ratio (~14) SiNWs. The nanoparticles were preserved after the etching, forming in situ integrated Au–Ag/Si junctions with each individual SiNWs. The SiNWs with capped nanoparticles possess superior field emission current density (45.80 mA/cm<sup>2</sup>) and current stability (fluctuation ~6%). A self-aligned process was developed to fabricate gated field emission devices, using the Au–Ag nanoparticle capped SiNWs as cathode. The gated devices showed field emission at low gate voltage (69.52- $mu text{A}$ /cm<sup>2</sup> at 42.1 V). Experimental and numerical simulation studies demonstrated the Au–Ag/Si contact behaved as space-charge-limited (SCL) Schottky conduction. The idea behind the enhancing and stable emission is that the SCL–Schottky junction undergoes a process of negative feedback and thus suppressed the current and shot-noise from the outstanding SiNWs. Accordingly, more SiNWs were activated and contributed stable and higher field emission current.

Fabrication of Vertically Aligned Si Nanowires and Their Application in A Gated Field Emission Device

Fabrication and Characterization of Gated Carbon Nanotube Emitters in A Trench Structure

Field emission properties of ultra-high density vertical aligned silicon nanowires

Si Nanowire With Integrated Space-Charge- Limited Conducted Schottky Junction for Enhancing Field Electron Emission and Its Gated Devices

Fabrication and Field Emission Properties of Multi-Walled Carbon Nanotube/silicon Nanowire Array

Fabrication of Carbon Nanotube Lateral Field Emitters

Field Emission from Nonaligned SiC Nanowires

Field Emission from Vertically Aligned Silicon Nanotubes

Aligned SiC Porous Nanowire Arrays with Excellent Field Emission Properties Converted from Si Nanowires on Silicon Wafer

Stable, Self-Ballasting Field Emission from Zinc Oxide Nanowires Grown on an Array of Vertically Aligned Carbon Nanofibers

Preparation, superior field emission properties and first principles calculation of electronic structure of SiC nanowire arrays on Si substrate

Fabrication of Vertically Aligned Single‐Crystalline Boron Nanowire Arrays and Investigation of Their Field‐Emission Behavior

Fabrication of highly oriented 4H-SiC gourd-shaped nanowire arrays and their field emission properties

Efficient field emission from electrochemically fabricated silicon nanocrystallite films

Electron Field Emission from Silicon Nanowires

Tunable field emission properties of well-aligned silicon nanowires with controlled aspect ratio and proximity

Field Emission from Silicon Nanocrystallite Films with Compact Alignment and Uniform Orientation

Fabrication and field emission property of a Si nanotip array

Stable Field Emission from Vertically Oriented SiC Nanoarrays

Fabrication and Field Emission of Silicon Nano-Crystalline Film

The dopant (n- and p-type), band gap, and size-dependent field electron emission induced from silicon nanowires