Abstract:This paper demonstrates a new method for the top-down production of silicon nanowire field effect transistors for sensing applications. A simple and robust method for the fabrication of these devices is described, using only conventional CMOS (Complementary Metal Oxide Semiconductor) processing techniques making it manufacturable on large scale in a broad range of production facilities. Moreover, the process is flexible in terms of the choice of the type of front oxide of the transistor, as it is applied in a separate, independent step from the application of the surrounding oxide. In case ultimate small dimensions are required that go beyond the wafer stepper resolution, the use of e-beam technology to produce even smaller structures can be easily integrated. Furthermore, the use of a passivation layer opens possibilities for adding selectivity via surface modification on silicon dioxide and silicon. After a detailed description of the process, the electrical characteristics of the devices are shown together with data on the device reliability, indicating that the process is easy to manufacture, has a large yield and results in sensor devices with electrical characteristics in the desired regime.

Top-down Fabricated Silicon-Nanowire-based Field-Effect Transistor Device on a (111) Silicon Wafer.

3-D matrix nano-wire transistor fabrication on silicon substrate

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication.

Silicon Nano-Wire Fabricated by Boe Silicon Etching

Tiny silicon nano-wires synthesis on silicon wafers

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Top-down fabrication of sub-30 nm monocrystalline silicon nanowires using conventional microfabrication

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In-plane Silicon Nanowires for Field Effect Transistor Application

Nanowire FETs with Nearly Single-Crystalline Si Channels by NiSi2-Seed Initiated Lateral Epitaxial Crystallization (SILEC)

Silicon Nanowire Synthesis by Chemical Vapor Deposition

Top-Down Fabrication of Shape Controllable Si Nanowires Based on Conventional Cmos Process

Self-aligned Multi-Channel Silicon Nanowire Field-Effect Transistors

Silicon Nano-Wires Fabricated by a Novel Thermal Evaporation of Zinc Sulfide

Robust fabrication method for silicon nanowire field effect transistors for sensing applications

Fabrication of Single‐Crystalline Silicon Nanowires by Scratching a Silicon Surface with Catalytic Metal Particles

High-fidelity Moulding Growth and Cross-section Shaping of Ultrathin Monocrystalline Silicon Nanowires

Synthesis and Fabrication of High‐Performance N‐type Silicon Nanowire Transistors

Fabrication of Conducting Si Nanowire Arrays

High-Performance Si Nanowire Transistors on Fully Si Bulk Substrate from Top-Down Approach: Simulation and Fabrication