Silicon Nano-Wires Fabricated by a Novel Thermal Evaporation of Zinc Sulfide

JJ Niu,J Sha,DR Yang
DOI: https://doi.org/10.1016/j.physe.2004.03.022
IF: 3.369
2004-01-01
Physica E Low-dimensional Systems and Nanostructures
Abstract:Silicon nano-wires (SiNWs) with diameter of ∼30nm and length of tens of micrometers on silicon wafers were synthesized by a novel thermal evaporation of zinc sulfide. After thermal evaporation at 1080°C for 1h, crystalline SiNWs were produced. It was found that the tip of SiNWs contained sulfur, while the other places of SiNWs did not. It is considered that the decomposition of SiS resulted in the formation of SiNWs. On the basis of the facts, a sulfide-assisted growth model of SiNWs was suggested.
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