Abstract:We report the nanocluster-catalyzed growth of ultralong and highly uniform single-crystalline silicon nanowires (SiNWs) with millimeter-scale lengths and aspect ratios up to approximately 100,000. The average SiNW growth rate using disilane (Si 2H 6) at 400 degrees C was 31 microm/min, while the growth rate determined for silane (SiH 4) reactant under similar growth conditions was 130 times lower. Transmission electron microscopy studies of millimeter-long SiNWs with diameters of 20-80 nm show that the nanowires grow preferentially along the 110 direction independent of diameter. In addition, ultralong SiNWs were used as building blocks to fabricate one-dimensional arrays of field-effect transistors (FETs) consisting of approximately 100 independent devices per nanowire. Significantly, electrical transport measurements demonstrated that the millimeter-long SiNWs had uniform electrical properties along the entire length of wires, and each device can behave as a reliable FET with an on-state current, threshold voltage, and transconductance values (average +/-1 standard deviation) of 1.8 +/- 0.3 microA, 6.0 +/- 1.1 V, 210 +/- 60 nS, respectively. Electronically uniform millimeter-long SiNWs were also functionalized with monoclonal antibody receptors and used to demonstrate multiplexed detection of cancer marker proteins with a single nanowire. The synthesis of structurally and electronically uniform ultralong SiNWs may open up new opportunities for integrated nanoelectronics and could serve as unique building blocks linking integrated structures from the nanometer through millimeter length scales.

A New Route to Large‐Scale Synthesis of Silicon Nanowires in Ultrahigh Vacuum

Ultrafast growth of single-crystalline Si nanowires

A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

Silicon nanowires fabricated by thermal evaporation of silicon monoxide

Silicon Nano-Wires Fabricated by a Novel Thermal Evaporation of Zinc Sulfide

Sulfide-assisted Growth of Silicon Nano-Wires by Thermal Evaporation of Sulfur Powders

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

Tiny silicon nano-wires synthesis on silicon wafers

Nanoscale Silicon Wires Synthesized Using Simple Physical Evaporation

Silicon nano-wires grown at low temperature

Silicon Nanowire Synthesis by Chemical Vapor Deposition

Tiny SiO2 nano-wires synthesized on Si (1 1 1 ) wafer

Ultralong Single Crystal Silicon Nanowires Synthesized by Chemical Vapor Deposition

Tiny SiO2 nano-wires synthesized on Si (111) wafer

Synthesis of large-scale SiC@SiO2 nanowires with good optical properties by using Si@SiO2 as silicon source

Epitaxial Growth of Vertically Free-Standing Ultra-Thin Silicon Nanowires.

High-fidelity Moulding Growth and Cross-section Shaping of Ultrathin Monocrystalline Silicon Nanowires

Synthesis of Very Long Silicon Nanowires for Potential Application in Nanodevice

Atomistics of vapor-liquid-solid nanowire growth

Preparation Of Silicon Nanowires Under High Pressure

Controlled synthesis of millimeter-long silicon nanowires with uniform electronic properties.