Abstract:Intrinsic silicon nanowires were prepared using hydrothermal method, with high activity silicon oxide powder (SiO) as raw material and deionized water as reaction medium, made through recrystallization and nucleation growth of the silicon atom in high temperature and high pressure supercritical water thermal environment in high pressure reaction kettle. The best hydrothermal conditions to prepare silicon nanowires were explored. It showed that the best condition of hydrothermal preparation of silicon nanowires was temperature of more than 450°C and pressure of 9~10 MPa by multiple experiments exploration. Through the scanning electron microscope (SEM), energy dispersive X-ray spectrometer (EDX) and high resolution transmission electron microscopy (HRTEM), the morphology and structure of SiNWs were observed and analyzed, and its components were analyzed. SEM showed that the surface of silicon nanowires was smooth, and its minimum diameter was 50 nm and its length was about 3 ~5 μm. It could be seen that SiNWs was made up of only silicon and oxygen elements, and silicon and oxygen atom number ratio was 3.5:1.0 by EDX image. Under the HRTEM, it showed that silicon nanowires was composed of crystalline silicon structure in the core and external amorphous silica cladding layer less than 5 nm. The Raman spectrum of intrinsic SiNWs showed that the Raman main peak occurred blue shift and asymmetric widening in low frequency due to the stress pressure and defect in SiNWs. The growth mechanism of preparation SiNWs by hydrothermal could be explained on the basis of experiment. SiO in water thermal environment reaction formed silicon and silicon dioxide by disproportionation, then Si and SiO2 began to stack formation a large number of nano clusters SixO, and silicon atom recrystallized in a certain temperature, at the same time, the nanowires grew under the guidance of the SixO SiNWs along the one dimensional direction.

Preparation Of Silicon Nanowires Under High Pressure

Ultrafast growth of single-crystalline Si nanowires

Preparation of Silicon Nanowires by Hydrothermal and Its Physical Properties

Sulfide-assisted Growth of Silicon Nano-Wires by Thermal Evaporation of Sulfur Powders

A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

Preparation of Silica Nanowires Using Porous Silicon As Si Source

Synthesis of Very Long Silicon Nanowires for Potential Application in Nanodevice

Tiny silicon nano-wires synthesis on silicon wafers

Tiny SiO2 nano-wires synthesized on Si (1 1 1 ) wafer

Preparation of Silicon Nanowires by Hydrothermal Deposition on Silicon Substrates

Tiny SiO2 nano-wires synthesized on Si (111) wafer

Synthesis and light emission of fine and straight Si nanowires

Synthesis and Raman Spectra of Si-Nanowires

Synthesis and Optical Property of Ultra-Long Alpha-Si3n4 Nanowires under Superatmospheric Pressure Conditions

Silicon Nano-Wires Fabricated by a Novel Thermal Evaporation of Zinc Sulfide

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

Hydrothermal controlled-synthesis in weak acid environment and optical performance of silicon nanowires

A New Route to Large‐Scale Synthesis of Silicon Nanowires in Ultrahigh Vacuum

Bulk Synthesis of Long Silicon Nitride Nanowires on Silicon Wafer

Mass Production of Α-Silicon Nitride Single-crystalline Nanowires

Long Silicon Nitride Nanowires Synthesized in a Simple Route