Synthesis and light emission of fine and straight Si nanowires

Jinxiao Wang,Hengqing Yan,YanLi Qin,Pingqi Gao,Junshuai Li,Min Yin,Shanglong Peng,Deyan He
2008-01-01
Journal of optoelectronics and advanced materials
Abstract:Using Au as catalyst, fine and straight Si nanowires (SiNWs) with diameters of 8-30 nm and lengths of several micrometers were synthesized by the self-designed chemical vapor deposition system at 480 degrees C. The influence of the growth pressures on the nanowire growth and morphology has been investigated by scanning electron microscopy (SEM). High-resolution transmission electron microscope (HRTEM) images indicate the growth direction of the nanowires are along the [1 1 1] with thin amorphous silicon oxide sheaths (similar to 3 nm). The SiNWs with the Raman peak positions at 517 cm(-1) exhibit a photoluminescence (PL) peak centered at 750 nm.
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