Abstract:One-dimensional (1D) nanostructures, such as semiconductor nanowires (NWs), nanobelts (NBs), and carbon nanotubes (CNTs), could be of ideal building blocks for electronic devices and might extend the remarkably successful scaling of microelectronics industry [3–6]. While the benefits of fin-gate field effective transistors (FET) have been very well established and implemented in micro-electronics, the same quasi-1D nano channel (diameter $\lt100$ nm) technology is hard to apply in large area electronics where the resolution of lithography is only 2 or 3 um. Self-assembly growth mediated by nano metal droplets can offer a low cost and high throughput solution to manufacture of tiny crystalline silicon nanowires (SiNWs). However, a precise location and orientation control of the self-assembly SiNWs over large area are still difficult to achieve with the common vapor-liquid-solid (VLS) growth mechanism. In this work, we will introduce a new in-plane solid-liquid-solid (IPSLS) growth, [1] which enables a precise growth routine and geometry controls over the self-assembly SiNWs. During an IPSLS growth, an amorphous Si (a-Si) thin film is used as the precursor layer that is absorbed by nano droplets of indium (In) to move laterally and produce continuous crystalline SiNWs behind. This growth can be activated at a rather low temperature $\lt 350$ °C in conventional PECVD system. Based on this unique capability, orderly crystalline SiNW channels can be easily manufactured over glass substrate, providing a key basis to fabricate high mobility fin-like thin film transistors (TFTs) for large area and high resolution display. Initial integration of the in-plane SiNWs for Fin-FETs has demonstrated a high hole mobility of $\gt150$ cm2V–1s–1, high on/off ratio $\gt 10^{6}$ and excellent subthreshold swing of only 120 mV/dec, via a low temperature procedure fully compatible to a-Si TFT technology. More importantly, thanks to a precise position and compositional controls over the tiny SiNWs [2–6], primitive logics can be constructed over the SiNW channels. Finally, a programmable geometry and line-shape engineering of the in-plane SiNWs will be showcased, which enables a reliable and low-cost fabrication of highly stretchable c-Si nano springs for high performance flexible and stretchable electronics. The SiNW logic device performance and the key control parameters of this IPSLS growth strategy, as well as its unique potentials in advanced 3D microelectronics, will be addressed.

Nanowire FETs with Nearly Single-Crystalline Si Channels by NiSi2-Seed Initiated Lateral Epitaxial Crystallization (SILEC)

Synthesis and Fabrication of High‐Performance N‐type Silicon Nanowire Transistors

High-Performance Si Nanowire Transistors on Fully Si Bulk Substrate from Top-Down Approach: Simulation and Fabrication

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication.

High-performance silicon nanowire field-effect transistor with silicided contacts

Epitaxial ZnS/Si Core–shell Nanowires and Single-Crystal Silicon Tube Field-Effect Transistors

High On/off Ratio P-Type Field-Effect Transistor Enabled by a Single Heavily Al-doped Α-Si3n4 Nanowire

Si Nanowire - Array Source Gated Transistors

Fabrication and Characterization of Poly-Si Vertical Nanowire Thin Film Transistor

High-Performance Silicon Nanowire Gate-All-Around Nmosfets Fabricated on Bulk Substrate Using CMOS-Compatible Process

Axially-doped n+-p−-n+ and p+-n−-p+ silicon nanowires: vapor-liquid-solid growth and field effect transistor characterization

Performance Breakthrough in Gate-All-Around Nanowire N- and P-Type MOSFETs Fabricated on Bulk Silicon Substrate

Self-aligned Multi-Channel Silicon Nanowire Field-Effect Transistors

Sic Nanowire Field-Effect Transistors Based On Dielectrophoresis

Fabrication of Vertically Aligned Si Nanowires and Their Application in A Gated Field Emission Device

Top-gated field effect devices using oxidized silicon nanowires

High-fidelity Moulding Growth and Cross-section Shaping of Ultrathin Monocrystalline Silicon Nanowires

High-performance Fully Depleted Silicon Nanowire (diameter /spl Les/ 5 Nm) Gate-All-around CMOS Devices

Terrace-confined guided growth of high-density ultrathin silicon nanowire array for large area electronics

Deterministic deployment of in-plane silicon nanowires for high performance large area electronics

A Silicon Nanocrystal Tunnel Field Effect Transistor