Abstract:Engineering materials at the nanoscale by combining controlled nanomaterial synthesis and directed assembly methods offers the potential to create new electronic and optical devices with improved performance and functionality. Semiconductor nanowires have been of particular interest as a model system for studying new physical phenomena arising from their scaled geometries as well as for applications in high performance vertical transistors, thin film electronic, electro-optical, and sensing devices and circuits. However, the use of relatively immature nanowire growth, in-situ doping, and device integration processes have made it difficult to elucidate and compare the electrical transport properties across different device platforms (e.g., nanowire versus planar) and length scales. This talk will describe recent results showing that thermally-oxidized in-situ axially-doped n+-p--n+ and p+-n--p+ silicon nanowires (20 to 50 run in diameter) grown by the vapor-liquid-solid technique can be used to fabricate stable and reproducible n- and p-channel top-gate and wrap-around-gate field effect transistors (FETs) that operate by inversion ofthe channel and have both high on-state current (Ion) and on/off-state current ratio (Ion/Ioff). Control measurements using back-gated device structures that separately probe the properties of the heavily-doped source/drain regions and lightly-doped channel region confirm that radial thin film deposition on the channel is prevented during vapor-liquid-solid growth of the second heavily-doped nanowire segment, which is necessary for fabricating complementary field effect transistors using these silicon nanowires. The effective mobility estimated from the measured channel resistance of n+-p--n+ and p+-n--p+ silicon nanowire FETs having 1 ?m-long channels will be provided and related to planar devices. Finally, the properties of the top-gate and wrap-around-gate n- and p-channel silicon nanowire FETs will be compared as a function of global back gate bias.

Si Nanowire - Array Source Gated Transistors

Nanotube and Nanowire Transistors

Nickel-Silicided Schottky Junction CMOS Transistors With Gate-All-Around Nanowire Channels

High-performance silicon nanowire field-effect transistor with silicided contacts

Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient

Top-gated field effect devices using oxidized silicon nanowires

In situ axially doped n-channel silicon nanowire field-effect transistors.

Demonstration of Schottky Barrier NMOS Transistors with Erbium Silicided Source/Drain and Silicon Nanowire Channel

Ge/Si nanowire heterostructures as high-performance field-effect transistors

Erbium/Platinum Silicided Gate-All-Around Silicon Nanowire Schottky Source/Drain MOSFETs

Axially-doped n+-p−-n+ and p+-n−-p+ silicon nanowires: vapor-liquid-solid growth and field effect transistor characterization

Nanowire FETs with Nearly Single-Crystalline Si Channels by NiSi2-Seed Initiated Lateral Epitaxial Crystallization (SILEC)

Vertical Silicon Nanowire CMOS Inverter

High-Performance Si Nanowire Transistors on Fully Si Bulk Substrate from Top-Down Approach: Simulation and Fabrication

A simple and controlled single electron transistor based on doping modulation in silicon nanowires

Nickel Salicided Source/Drain Extensions for Performance Improvement in Ultrascaled (sub 10 Nm) Si-Nanowire Transistors

Dual Nanowire Pmosfet With Thin Si Bridge And Tan Gate

Self-aligned Multi-Channel Silicon Nanowire Field-Effect Transistors

Dual gate controlled single electron effect in silicon nanowire transistors

A Compact Model of Silicon-Based Nanowire Field Effect Transistor for Circuit Simulation and Design

DC baseband and high-frequency characteristics of a silicon nanowire field effect transistor circuit