Abstract:Solution processed field-effect transistors based on single crystalline silicon nanowires (Si NWs) with metal Schottky contacts are demonstrated. The semiconducting layer was deposited from a nanowire ink formulation at room temperature. The devices with 230nm thick SiO2 gate insulating layers show excellent output current-voltage characteristics with early saturation voltages under 2 volts, constant saturation current and exceptionally low dependence of saturation voltage with the gate field. Operational principles of these devices are markedly different from traditional ohmic-contact field-effect transistors (FETs), and are explained using the source-gated transistor (SGT) concept in which the semiconductor under the reverse biased Schottky source barrier is depleted leading to low voltage pinch-off and saturation of drain current. Device parameters including activation energy are extracted at different temperatures and gate voltages to estimate the Schottky barrier height for different electrode materials to establish transistor performance - barrier height relationships. Numerical simulations are performed using 2D thin-film approximation of the device structures at various Schottky barrier heights. Without any adjustable parameters and only assuming low p-doping of the transistor channel, the modelled data show exceptionally good correlation with the measured data. From both experimental and simulation results, it is concluded that source-barrier controlled nanowire transistors have excellent potential advantages compared with a standard FET including mitigation of short-channel effects, insensitivity in device operating currents to device channel length variation, higher on/off ratios, higher gain, lower power consumption and higher operational speed for solution processable and printable nanowire electronics.

Nickel-Silicided Schottky Junction CMOS Transistors With Gate-All-Around Nanowire Channels

Erbium/Platinum Silicided Gate-All-Around Silicon Nanowire Schottky Source/Drain MOSFETs

Demonstration of Schottky Barrier NMOS Transistors with Erbium Silicided Source/Drain and Silicon Nanowire Channel

Si Nanowire - Array Source Gated Transistors

High-performance Fully Depleted Silicon Nanowire (diameter /spl Les/ 5 Nm) Gate-All-around CMOS Devices

Improved Carrier Injection in Gate-All-around Schottky Barrier Silicon Nanowire Field-Effect Transistors

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

CMOS compatible Gate-All-Around Vertical silicon-nanowire MOSFETs

Performance Breakthrough in Gate-All-Around Nanowire N- and P-Type MOSFETs Fabricated on Bulk Silicon Substrate

Dual Nanowire Pmosfet With Thin Si Bridge And Tan Gate

CMOS compatible Ge/Si core/shell nanowire gate-all-around pMOSFET integrated with HfO2/TaN gate stack

Vertical Silicon Nanowire CMOS Inverter

Dual Nanowire Silicon MOSFET With Silicon Bridge and TaN Gate

Performance and Variability Studies of InGaAs Gate-all-Around Nanowire MOSFETs

Nickel Salicided Source/Drain Extensions for Performance Improvement in Ultrascaled (sub 10 Nm) Si-Nanowire Transistors

Fully Gate-All-Around Silicon Nanowire Cmos Devices

High-Performance Silicon Nanowire Gate-All-Around Nmosfets Fabricated on Bulk Substrate Using CMOS-Compatible Process

Performance Limit of Gate-All-Around Si Nanowire Field-Effect Transistors: an Ab Initio Quantum Transport Simulation

Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient

High-performance silicon nanowire field-effect transistor with silicided contacts

Novel GAA Si Nanowire P-Mosfets with Excellent Short-Channel Effect Immunity Via an Advanced Forming Process