Abstract:Publication date: 19 May 2023 Source: Key Engineering Materials Vol. 945 Author(s): Dong Yang, Stephan Wirths, Lars Knoll, Yi Han, Dan Mihai Buca, Qing Tai Zhao SiC gate-all-around (GAA) nanowire (NW) MOSFET is one of the most promising device architectures for the next generation of SiC power MOSFETs. This work reveals the great application potential of vertical SiC GAA NW power MOSFETs via TCAD simulation. The investigated devices show higher channel electron mobility (μch) and larger channel carrier density (nch) compared to the conventional SiC power MOSFET. Scaling down of NW diameter (DNW) is beneficial in terms of both, lowering channel resistance (Rch) via improving nch and, increasing breakdown voltage (Vb) by modifying electric field distribution. Low specific-on resistance (Ron,sp) of about 0.68 mΩ∙cm2 for 1 kV SiC MOSFET is shown as possible. However, scaling down the DNW below 100 nm causes an undesirable increase in Ron,sp due to the unscalable device area which is limited by the vertical gate wrapping stacks. The study on device scaling where the NW diameter (DNW) varies from 500 nm to 25 nm provides valuable design considerations for the device's performance. Finally, a top-down process has been developed for the device fabrication. Vertical SiC NWs with an aspect ratio of 10 are formed by an optimized micro-trench free dry etching process.

Performance Breakthrough in Gate-All-Around Nanowire N- and P-Type MOSFETs Fabricated on Bulk Silicon Substrate

High-Performance Silicon Nanowire Gate-All-Around Nmosfets Fabricated on Bulk Substrate Using CMOS-Compatible Process

High-performance Fully Depleted Silicon Nanowire (diameter /spl Les/ 5 Nm) Gate-All-around CMOS Devices

Performance Limit of Gate-All-Around Si Nanowire Field-Effect Transistors: an Ab Initio Quantum Transport Simulation

CMOS compatible Gate-All-Around Vertical silicon-nanowire MOSFETs

Enhanced Device Performance with Vertical SiC Gate-All-Around Nanowire Power MOSFETs

Performance and Variability Studies of InGaAs Gate-all-Around Nanowire MOSFETs

Novel GAA Si Nanowire P-Mosfets with Excellent Short-Channel Effect Immunity Via an Advanced Forming Process

High-Performance Si Nanowire Transistors on Fully Si Bulk Substrate from Top-Down Approach: Simulation and Fabrication

Performance Breakthrough in 8 Nm Gate Length Gate-All-Around Nanowire Transistors Using Metallic Nanowire Contacts

Nickel-Silicided Schottky Junction CMOS Transistors With Gate-All-Around Nanowire Channels

Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs

20&Amp;#x2013;80nm Channel Length InGaAs Gate-All-around Nanowire MOSFETs with EOT&#x003D;1.2nm and Lowest SS&#x003D;63mV/dec

Room. Temperature Coulomb Blockade Oscillations In Gate-All-Around Silicon Nanowire (Radius Similar To 2nm) N-M Sfets

Fully Gate-All-Around Silicon Nanowire Cmos Devices

Fabrication and Transport Behavior Investigation of Gate-All-Around Silicon Nanowire Transistor from Top-Down Approach

Dual Nanowire Silicon MOSFET With Silicon Bridge and TaN Gate

Dual Nanowire Pmosfet With Thin Si Bridge And Tan Gate

Diamond-shaped Ge and Ge0.9Si0.1 gate-all-around nanowire FETs with four {111} facets by dry etch technology

First Experimental Demonstration of Gate-All-around III&#x2013;V MOSFETs by Top-Down Approach

Nanowire FETs with Nearly Single-Crystalline Si Channels by NiSi2-Seed Initiated Lateral Epitaxial Crystallization (SILEC)