Abstract:The gate-all-around (GAA) silicon nanowire transistor (SNWT) is considered one of the best candidates for ultimately scaled CMOS devices at the end of the technology roadmap. This paper reviews our recent work on the key issues regarding SNWTs from the top-down approach including process integration, carrier transport, and fluctuation and variability in these unique one-dimensional strongly-confined nanowire devices. A new process integration scheme for SNWTs is discussed, which features a fully-Si-bulk substrate, an epi-free process, a self-aligned structure and a large source/drain fan-out. The physical characteristics of the fabricated devices with 10-nm-diameter nanowires are further investigated. The carrier transport performance in SNWTs is experimentally estimated, with a modified extraction methodology which takes into account the impact of temperature dependence of parasitic source resistance. SNWTs with sub-40-nm gate lengths exhibit high ballistic efficiency at room temperature, indicating great potential for SNWTs as an alternative device structure for near-ballistic transport. For heat transfer in SNWTs, the self-heating effect is also characterized. However, due to the one-dimensional (1-D) nature of nanowires and increased phonon-boundary scattering in the GAA structure, the self-heating effect in SNWTs based on the bulk substrate is comparable or even a little bit worse than SOI devices, which may limit the ultimate performance of SNWT-based circuits and thus, special design consideration is expected. On the other hand, random variation has become a practical problem at nano-scale. The characteristic variability of SNWTs is experimentally studied in detail. The results of extracted variation sources indicate that, with suppressed random dopant fluctuations in the intrinsic channel, variations in radius and metal-gate work function of SNWTs dominate both the threshold voltage and on-current fluctuations. Comparing with conventional planar MOS devices, SNWT based SRAM cells exhibit better stability due to the superior electrostatic control in SNWTs.

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

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Total Ionizing Dose Effects on Nanosheet Gate-All-Around MOSFETs Built on Void Embedded Silicon on Insulator Substrate

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Characteristics and ultra-high total ionizing dose response of 22 nm fully depleted silicon-on-insulator

Investigation of Gate-All-around Silicon Nanowire Transistors for Ultimately Scaled CMOS Technology from Top-Down Approach

A Novel S-Gate-Assisted SOI n-MOSFET for Total Ionizing Dose Radiation Reinforcement

Investigation on Electrostatic Discharge Robustness of Gate-All-Around Silicon Nanowire Transistors Combined with Thermal Analysis

Impact of Gate Dielectric Geometry on the Nanowire MOSFETs Performance and Scaling

Total ionizing dose and single-event effect in vertical channel double-gate nMOSFETs

Geometry and Temperature Effects on the Threshold Voltage Characteristics of Silicon Nanowire MOS Transistors

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Optimization of zero-level interlayer dielectric materials for gate-all-around silicon nanowire channel fabrication in a replacement metal gate process

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Characterization And Analysis Of Gate-All-Around Si Nanowire Transistors For Extreme Scaling

New Observation On Gate-Induced Drain Leakage In Silicon Nanowire Transistors With Epi-Free Cmos Compatible Technology On Soi Substrate

Symmetric and Excellent Scaling Behavior in Ultrathin <i>n</i>‐ and <i>p</i>‐Type Gate‐All‐Around InAs Nanowire Transistors

The Effects of Threshold Voltage and Number of Fins per Transistor on the TID Response of GF 12LP Technology

In-Depth DTCO Analysis on Scaling Gate-All-Around Nanosheets/Nanowires for 20 Å Node and Beyond Technologies

Self-heating effect and characteristic variability of gate-all-around silicon nanowire transistors for highly-scaled CMOS technology (invited)