Abstract:The gate-all-around (GAA) silicon nanowire transistor (SNWT) is considered one of the best candidates for ultimately scaled CMOS devices at the end of the technology roadmap. This paper reviews our recent work on the key issues regarding SNWTs from the top-down approach including process integration, carrier transport, and fluctuation and variability in these unique one-dimensional strongly-confined nanowire devices. A new process integration scheme for SNWTs is discussed, which features a fully-Si-bulk substrate, an epi-free process, a self-aligned structure and a large source/drain fan-out. The physical characteristics of the fabricated devices with 10-nm-diameter nanowires are further investigated. The carrier transport performance in SNWTs is experimentally estimated, with a modified extraction methodology which takes into account the impact of temperature dependence of parasitic source resistance. SNWTs with sub-40-nm gate lengths exhibit high ballistic efficiency at room temperature, indicating great potential for SNWTs as an alternative device structure for near-ballistic transport. For heat transfer in SNWTs, the self-heating effect is also characterized. However, due to the one-dimensional (1-D) nature of nanowires and increased phonon-boundary scattering in the GAA structure, the self-heating effect in SNWTs based on the bulk substrate is comparable or even a little bit worse than SOI devices, which may limit the ultimate performance of SNWT-based circuits and thus, special design consideration is expected. On the other hand, random variation has become a practical problem at nano-scale. The characteristic variability of SNWTs is experimentally studied in detail. The results of extracted variation sources indicate that, with suppressed random dopant fluctuations in the intrinsic channel, variations in radius and metal-gate work function of SNWTs dominate both the threshold voltage and on-current fluctuations. Comparing with conventional planar MOS devices, SNWT based SRAM cells exhibit better stability due to the superior electrostatic control in SNWTs.

Characterization And Analysis Of Gate-All-Around Si Nanowire Transistors For Extreme Scaling

Investigation of Gate-All-around Silicon Nanowire Transistors for Ultimately Scaled CMOS Technology from Top-Down Approach

Gate-All-Around Silicon Nanowire Transistor Technology

Fabrication and Transport Behavior Investigation of Gate-All-Around Silicon Nanowire Transistor from Top-Down Approach

Theoretical Study for Carrier Transit Limited Performance of Gate-All-Around Si Nanowire Transistor by Time-Dependent Quantum Transport Simulation

Variability investigation of gate-all-around silicon nanowire transistors from top-down approach

Effective Gate Length Model for Asymmetrical Gate-All-around Silicon Nanowire Transistors

Self-heating effect and characteristic variability of gate-all-around silicon nanowire transistors for highly-scaled CMOS technology (invited)

A Non-Quasi-static Model for Nanowire Gate-All-around Tunneling Field-Effect Transistors

Performance Limit of Gate-All-Around Si Nanowire Field-Effect Transistors: an Ab Initio Quantum Transport Simulation

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

Experimental Investigations on Carrier Transport in Si Nanowire Transistors: Ballistic Efficiency and Apparent Mobility

In-Depth DTCO Analysis on Scaling Gate-All-Around Nanosheets/Nanowires for 20 Å Node and Beyond Technologies

HCI and NBTI Induced Degradation in Gate-All-around Silicon Nanowire Transistors

The Insight and Evaluation of Ultra-Scaled Sub-1 Nm Gate Length Transistors

Electrical Characteristics of In 0.53 Ga 0.47 As Gate-All-Around MOSFETs With Different Nanowire Shapes

Nickel-Silicided Schottky Junction CMOS Transistors With Gate-All-Around Nanowire Channels

Performance Analysis of the Gate All Around Nanowire FET with Group III–V Compound Channel Materials and High-k Gate Oxides

Performance Breakthrough in 8 Nm Gate Length Gate-All-Around Nanowire Transistors Using Metallic Nanowire Contacts

Investigation on Electrostatic Discharge Robustness of Gate-All-Around Silicon Nanowire Transistors Combined with Thermal Analysis

Investigation on Variability in Metal-Gate Si Nanowire Mosfets: Analysis of Variation Sources and Experimental Characterization