Abstract:The gate-all-around (GAA) silicon nanowire transistor (SNWT) is considered one of the best candidates for ultimately scaled CMOS devices at the end of the technology roadmap. This paper reviews our recent work on the key issues regarding SNWTs from the top-down approach including process integration, carrier transport, and fluctuation and variability in these unique one-dimensional strongly-confined nanowire devices. A new process integration scheme for SNWTs is discussed, which features a fully-Si-bulk substrate, an epi-free process, a self-aligned structure and a large source/drain fan-out. The physical characteristics of the fabricated devices with 10-nm-diameter nanowires are further investigated. The carrier transport performance in SNWTs is experimentally estimated, with a modified extraction methodology which takes into account the impact of temperature dependence of parasitic source resistance. SNWTs with sub-40-nm gate lengths exhibit high ballistic efficiency at room temperature, indicating great potential for SNWTs as an alternative device structure for near-ballistic transport. For heat transfer in SNWTs, the self-heating effect is also characterized. However, due to the one-dimensional (1-D) nature of nanowires and increased phonon-boundary scattering in the GAA structure, the self-heating effect in SNWTs based on the bulk substrate is comparable or even a little bit worse than SOI devices, which may limit the ultimate performance of SNWT-based circuits and thus, special design consideration is expected. On the other hand, random variation has become a practical problem at nano-scale. The characteristic variability of SNWTs is experimentally studied in detail. The results of extracted variation sources indicate that, with suppressed random dopant fluctuations in the intrinsic channel, variations in radius and metal-gate work function of SNWTs dominate both the threshold voltage and on-current fluctuations. Comparing with conventional planar MOS devices, SNWT based SRAM cells exhibit better stability due to the superior electrostatic control in SNWTs.

Investigation on Variability in Metal-Gate Si Nanowire Mosfets: Analysis of Variation Sources and Experimental Characterization

Experimental investigation and design optimization guidelines of characteristic variability in silicon nanowire CMOS technology

Self-heating effect and characteristic variability of gate-all-around silicon nanowire transistors for highly-scaled CMOS technology (invited)

Investigation of Gate-All-around Silicon Nanowire Transistors for Ultimately Scaled CMOS Technology from Top-Down Approach

Investigation of Nanowire Line-Edge Roughness in Gate-All-Around Silicon Nanowire MOSFETs

Investigation of process variation in vertically stacked gate-all-around nanowire transistor and SRAM circuit

Impact of Process Variation on Nanosheet Gate-All-Around Complementary FET (CFET)

Quantum simulation investigation of work-function variation in nanowire tunnel FETs

Simulation of line-edge roughness effects in silicon nanowire MOSFETs

Investigation of Analog/RF Performance and Reliability Behavior of Silicon Nanowire MOSFETs

Investigation on Electrostatic Discharge Robustness of Gate-All-Around Silicon Nanowire Transistors Combined with Thermal Analysis

Geometry and Temperature Effects on the Threshold Voltage Characteristics of Silicon Nanowire MOS Transistors

Analog/RF Performance of Si Nanowire MOSFETs and the Impact of Process Variation

Characterization And Analysis Of Gate-All-Around Si Nanowire Transistors For Extreme Scaling

Variability in nano-scale intrinsic silicon-on-thin-box MOSFETs (SOTB MOSFETs)

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

Investigation on the effective immunity to process induced line-edge roughness in silicon nanowire MOSFETs

Investigation on Self-Heating Effect in Gate-All-Around Silicon Nanowire MOSFETs from Top-Down Approach

Study of low frequency noise behavior in silicon nanowire transistors fabricated with top-to-down approach

Fabrication and Transport Behavior Investigation of Gate-All-Around Silicon Nanowire Transistor from Top-Down Approach

Impacts of Diameter and Ge Content Variation on the Performance of Si1-xGex P-Channel Gate-All-Around Nanowire Transistors