Abstract:Theoretically, the upper limit performance of nanoscale transistor should be limited by carrier transit time through the channel as the charge in channel cannot follow the gate voltage and the gate capacitance will show strong frequency dependence if the gate voltage varies faster than the carrier transit time. Currently, the operation frequency of nanoscale transistor is limited by the non-ideal factors such as parasitic effects, and it is far below the limit caused by carrier transit time. However, how good the transistor can be if one can minimize these non-ideal factors is still a problem, thus, it would be worth exploring its upper limit performance. In this article, time-dependent quantum transport simulation is performed to explore the carrier transit limited performance of the gate-all-around (GAA) Si nanowire transistor. By using the mode space approach, the 3-D time-dependent quantum transport equation is decoupled to a 2-D confinement problem and a 1-D transport problem, and then self-consistently solved with the Poisson’s equation. The transient characteristics of channel charge are investigated, and it shows the response time of channel charge is in the scale of 0.1 ps. The responses of channel charge and drain current to high-frequency gate voltages are simulated. The carrier transit limited performance including the frequency-dependent gate capacitance and transconductance, 3 dB bandwidth, and cutoff frequency, are calculated and discussed.

Impacts of Diameter and Ge Content Variation on the Performance of Si1-xGex P-Channel Gate-All-Around Nanowire Transistors

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Investigation the Impact of Composition on the Performance of SiGe Nanowire Pmosfets by Different Simulation Methods

Impact of Gate Dielectric Geometry on the Nanowire MOSFETs Performance and Scaling

Impact of the Si Content on the Electrical Properties of NiSi x Ge 1– x Source/Drain Contact Metal for Ge pMOSFETs

Geometry and Temperature Effects on the Threshold Voltage Characteristics of Silicon Nanowire MOS Transistors

Electrical Properties of Each Channels in Vertical Stacked Gate-All-Around Nanosheet s-Si pMOSFETs.

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

Investigation on Variability in Metal-Gate Si Nanowire Mosfets: Analysis of Variation Sources and Experimental Characterization

Theoretical Study for Carrier Transit Limited Performance of Gate-All-Around Si Nanowire Transistor by Time-Dependent Quantum Transport Simulation

Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI Pmosfets with Al2O3/GeOx Gate Stacks

Performance Estimations of Gate-All-around Silicon Nanowire FETs with Asymmetric Barrier Heights at Source/drain

Effects of Shell Strain on Valence Band Structure and Transport Properties of Ge/Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub>Core–Shell Nanowire

Performance Investigation of P-Type Ge- and Ge-Core/Si-Shell Junctionless Nanowire Transistors

Effects Of Shell Strain On Valence Band Structure And Transport Properties Of Ge/Si1-Xgex Core-Shell Nanowire

Performance Investigation on P-Type Si-, Ge-, and Ge–Si Core–Shell Nanowire Schottky Barrier Transistors

Impact Of Strain On The Performance Of Ge-Si Core-Shell Nanowire Field Effect Transistors

DC and Analog/rf Comparisons of Si- and Ge- Nanowire Schottky Barrier Transistors

Experimental investigation and design optimization guidelines of characteristic variability in silicon nanowire CMOS technology

3D Monte Carlo Simulation of gate-All-around germanium nMOSFET with Effective potential Quantum Correction.