Abstract:This article presents a physics-based simulation study of a Si-core-SiGe-shell gate-all-around (GAA) nanosheet FET (NSFET). The numerical simulations employ various models including 1) an elastic model for lattice mismatch-induced stress in the core/shell structure; 2) the method with a Poisson solver for the electrostatics; 3) Kubo-Greenwood model for low-field mobility calculation with surface roughness fit with experimental results; and 4) multi-subband Boltzmann transport equation (SBTE) for the high-field transfer characteristics. The study evaluates the effect of channel/wafer orientation, Ge component ratio in SiGe-shell region, core thickness , and surface roughness on electrostatics and transport properties. The Si/SiGe core/shell structure can be an additional performance knob for advanced technology node beyond 3 nm due to the following key physics: 1) thin SiGe-shell region with a high Ge component ratio tends to exhibit higher compressive stress in the shell region due to lattice mismatch; 2) holes are mainly confined in the SiGe-shell region under compressive strain at ON-state, leading to a significant enhancement in for pMOS devices; and 3) core/shell devices exhibit lower hole density at OFF-state in the channel compared with Si-channel device, resulting in current leakage reduction. Finally, the proposed Si-core-SiGe-shell pMOS device achieves a 30.5% enhancement of at nm and = 0.1, and two orders of magnitude higher ON- OFF ratio at = 2 nm and = 0.1, compared to the single Si-channel pMOS device. The results suggest that the proposed core-shell structure is a potential candidate for 3-nm node pMOS and beyond.

Electrical Properties of Each Channels in Vertical Stacked Gate-All-Around Nanosheet s-Si pMOSFETs.

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Design Considerations for Si- and Ge-Stacked Nanosheet Pmosfets Based on Quantum Transport Simulations

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Influence of Channel Length, Thickness, and Crystal Orientation in Ultra-Scaled Double-Gate Pmosfets

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Physical Insights of Si-Core-SiGe-Shell Gate-All-Around Nanosheet pFET for 3 nm Technology Node

Impact of Stress and Dimension on Nanosheet Deformation during Channel Release of Gate-All-Around Device

Electrical Properties of Ge Pmosfets with Ultrathin EOT HfO2/AlOx/GeOx Gate-Stacks and NiGe Metal Source/Drain

A Novel Si Nanosheet Channel Release Process for the Fabrication of Gate-All-Around Transistors and Its Mechanism Investigation

Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices

Body Effect of SiGe and CESL Strained Nano-Node NMOSFETs on (100) Silicon Substrate

Investigation of Nanosheet Deformation During Channel-Release in Gate-All-Around Nanosheet Transistors

Impact of Gate Length and Doping Variation on the DC and Analog/RF Performance of sub - 3nm Stacked Si Gate-All-Around Nanosheet FET

Comprehensive Stress Effect of Thin Coatings and Silicon-Carbon Lattice Mismatch on Nano-Scaled Transistors with Protruding Poly Gate

Strain Evolution in SiGe Nanosheet Transistor Process Flow

Strained Silicon–Germanium-On-Insulator N-Mosfet with Embedded Silicon Source-and-Drain Stressors

Vertically Stacked SiGe Nanowire Array Channel CMOS Transistors

Three Dimensionally Stacked Sige Nanowire Array And Gate-All-Around P-Mosfets

Epi Source-Drain Damage Mitigation During Channel Release of Stacked Nanosheet Gate-All-Around Transistors

Strained Silicon-Germanium-on-Insulator N-MOSFETs Featuring Lattice Mismatched Source/Drain Stressor and High-Stress Silicon Nitride Liner