Abstract:As CMOS technology downscales into 22nm and beyond nodes, strain engineering technologies are widely used to improve the short channel effect and enhance MOS mobility to make high performance devices. During these technology developments, SiGe selective epitaxial growth has been used as stressor material in source and drain (S/D) region to induce uniaxial strain in channel region [1]. In order to further enhance the MOS channel mobility, the recess shape has to be designed to create maximum strain from the grown SiGe layers. To achieve this goal the etch step has been modified to elaborate a sigma (∑) shape recess and a high Ge content film is deposited in S/D regions [2]. Then SiGe epitaxy process becomes sensitive to surface quality of the recess where a careful etching and in- and ex-situ cleaning are demanded. In this study, selective Si1-xGex growth (0.25≤x≤0.35) with boron concentration of 1-3×1020 cm-3for 22nm node CMOS process has been investigated (see Fig.1). The selectivity issue has examined/tuned around the gate region where both nitride and oxide layers were presented and the thermal budget was decreased to 800 °C to preserve the sigma shape in the S/D regions (see Fig.2). The structures contained two Si1-xGex layers; where the recess was filled first with Si0.65Ge0.35 and then a cap Si0.75Ge0.25layer to elevate the S/D regions. The purpose for having the elevated SiGe cap layer was to avoid strain relaxation in the SiGe bottom layer during the Ni-silicidation process. The Ge content in epi-layers on the chips was measured directly by rocking curves (RCs) using high-resolution x-ray diffraction (HRXRD). RC were done at (113) reflection where the incident beam is as low as 2.6° and a large area of sample containing an enormous of number of transistors could be covered by x-ray beam. These RCs were simulated by the Takagi-Taupin equations and compared to the experimental curves in order to obtain the high precision data analysis[3]. In these measurements, the boron concentration was estimated by the strain compensation in SiGe layers. The shift of B-doped SiGe peak was compared to the intrinsic ones and interpreted into the substitutional dopant concentration. In these SiGe layers, the B dopant concentration was quite high and the strain compensation could easily be measured. Cross-section images where provided by high-resolution scanning electron microscopy (HRSEM) and transmission electron microscopy (HRTEM) to measure the layer thickness, epi-quality, and integrity of the whole transistor structures. In the latter analysis, energy dispersive spectroscopy (EDS) technique was also employed to measure the Ge profile in parallel and perpendicular directions in the S/D regions of the transistors.

Strain Evolution in SiGe Nanosheet Transistor Process Flow

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

Strained Silicon–Germanium-on-Insulator n-Channel Transistor with Silicon Source and Drain Regions for Performance Enhancement

Strained Silicon–Germanium-On-Insulator N-Mosfet with Embedded Silicon Source-and-Drain Stressors

Body Effect of SiGe and CESL Strained Nano-Node NMOSFETs on (100) Silicon Substrate

Uniaxial Strained Silicon N-Fets On Silicon-Germanium-On-Insulator Substrates With An E-Si0.7ge0.3 Stress Transfer Layer And Source/Drain Stressors For Performance Enhancement

Sub 50nm Strained n-FETs Formed on Silicon-Germanium-on-Insulator Substrates and the Integration of Silicon Source/Drain Stressors

Electrical Properties of Each Channels in Vertical Stacked Gate-All-Around Nanosheet s-Si pMOSFETs.

Strained Silicon-Germanium-on-Insulator N-MOSFETs Featuring Lattice Mismatched Source/Drain Stressor and High-Stress Silicon Nitride Liner

Strain Release Enabled Bandgap Scaling in Ge Nanowire and Tunnel FET Application

Integration of Selective Epitaxial Growth of SiGe/Ge Layers in 14nm Node FinFETs

Integration of Highly-Strained Sige Materials in 14 Nm and Beyond Nodes Finfet Technology

Sige Selective Epitaxial Growth Process for 22 Nm Node CMOS and Beyond

Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology

Performance comparison and channel length scaling of strained Si FETs on SiGe-on-insulator (SGOI)

The Enhancement of MOSFET Electric Performance Through Strain Engineering by Refilled Sige As Source and Drain

Comprehensive Stress Effect of Thin Coatings and Silicon-Carbon Lattice Mismatch on Nano-Scaled Transistors with Protruding Poly Gate

Characteristics and hot-carrier effects of strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressors

Silicon-Germanium-Tin (sigesn) Source and Drain Stressors Formed by Sn Implant and Laser Annealing for Strained Silicon-Germanium Channel P-MOSFETs

Strained Pmosfets With Sige Channel And Embedded Sige Source/Drain Stressor Under Heating And Hot-Carrier Stresses