Abstract:Germanium based metal oxide semiconductor (MOS) device has been a research hotspot and considered as a potential candidate for future complementary MOS (CMOS) technology due to its high and symmetric carrier mobility. However, the poor quality of gate dielectric/channel interface significantly restricts the performances of germanium based MOS devices. Besides, the solid-solubility and activation concentration of dopants in Ge are both quite low, and the dopants diffuse fast in Ge, which makes it difficult to achieve ultra-shallow junction with high dopant concentration, especially for Ge NMOS devices.To solve these problems, different techniques are proposed and overviewed. The proposed nitrogen-plasma-passivation method can effectively suppress the regrowth of germanium sub-oxide and reduce the interface state density. Thus the performance of the fabricated Ge NMOS device is significantly improved. To enhance the n-type dopant activation in Ge, the multiple implantation technique and the multiple annealing technique are proposed. High electrical activation over 1 1020 cm-3 is achieved, and the corresponding contact resistivity is reduced to 3.8 10-7 cm2. Besides, the implantation after germanide (IAG) technique is first proposed to modulate the Schottky barrier height (SBH). The record-low electron SBH of 0.10 eV is obtained by IAG technique, and the optimized process window is given. In addition, the poor thermal stability of NiGe restricts the further improvement in performance of Ge MOS device. P and Sb co-implantation technique and novel ammonium fluoride pretreatment method are proposed to improve the thermal stability of NiGe. The electrical characteristic of NiGe/Ge diode is also improved simultaneously. The results provide the guidelines for further enhancing the performances of germanium-based MOS devices.

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

High Mobility Strained-Ge Pmosfets with 0.7-Nm Ultrathin EOT Using Plasma Post Oxidation HfO2/Al2O3/GeOx Gate Stacks and Strain Modulation

Mobility Enhancement Techniques for Ge and GeSn MOSFETs

Unlocking the Potential of GeS Monolayer: Strain-Enabled Control of Electronic Transports and Exciton Radiative Lifetimes

Ge CMOS Technology with Advanced Interface and Junction Engineering.

Electron Mobility Enhancement Characteristics and Its Temperature Dependence in Strained-Si n-MOSFETs

Strain Tuning on Van Der Waals Negative Capacitance Transistors

Research Progress of High Mobility Germanium Based Metal Oxide Semiconductor Devices

Strain-dependent grain boundary properties of n-type germanium layers

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

Impact Of Strain On The Performance Of Ge-Si Core-Shell Nanowire Field Effect Transistors

Strained germanium thin film membrane on silicon substrate for optoelectronics

Tuned electronic band structure and intensified phonon scattering of Ge2Sb2Te5 by strain engineering for thermoelectric performance

Strain Engineering and Mechanical Assembly of Silicon/germanium Nanomembranes

Mobility Enhancement of Strained GaSb P-Channel Metal Oxide Semiconductor Field-Effect Transistors with Biaxial Compressive Strain

Compressively strained GaSb P-channel MOSFETs with high hole mobility

Strain Engineering for Enhancing Carrier Mobility in MoTe2 Field-Effect Transistors

Strain Engineering Tunable Electronic Conductivity in Two- Dimensional Γ-Gese

Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs

High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response

Strain effects on polycrystalline germanium thin films