A case report of an obesity hypoventilation syndrome associated with obstructive sleep apnea due to a carotid body paraganglioma.

B. Herer,F. Royand,E. Kieffer,J. Vincent

DOI: https://doi.org/10.1016/S1389-9457(03)00110-2

IF: 4.842

2003-09-01

Sleep Medicine

Abstract:

What problem does this paper attempt to address?

Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics

David S Sukhdeo,Donguk Nam,Ju-Hyung Kang,Mark L Brongersma,Krishna C Saraswat

DOI: https://doi.org/10.1364/OE.23.016740

2015-06-29

Abstract:Strain engineering has proven to be vital for germanium-based photonics, in particular light emission. However, applying a large permanent biaxial tensile strain to germanium has been a challenge. We present a simple, CMOS-compatible technique to conveniently induce a large, spatially homogenous strain in circular structures patterned within germanium nanomembranes. Our technique works by concentrating and amplifying a pre-existing small strain into a circular region. Biaxial tensile strains as large as 1.11% are observed by Raman spectroscopy and are further confirmed by photoluminescence measurements, which show enhanced and redshifted light emission from the strained germanium. Our technique allows the amount of biaxial strain to be customized lithographically, allowing the bandgaps of different germanium structures to be independently customized in a single mask process.
A Nanomembrane-Based Bandgap-Tunable Germanium Microdisk Using Lithographically-Customizable Biaxial Strain for Silicon-Compatible Optoelectronics

David S. Sukhdeo,Donguk Nam,Ju-Hyung Kang,Mark L. Brongersma,Krishna C. Saraswat

DOI: https://doi.org/10.48550/arXiv.1411.0772

2014-11-04

Abstract:Strain engineering has proven to be vital for germanium-based photonics, in particular light emission. However, applying a large permanent biaxial strain to germanium has been a challenge. We present a simple, CMOS-compatible technique to conveniently induce a large, spatially homogenous strain in microdisks patterned within ultrathin germanium nanomembranes. Our technique works by concentrating and amplifying a pre-existing small strain into the microdisk region. Biaxial strains as large as 1.11% are observed by Raman spectroscopy and are further confirmed by photoluminescence measurements, which show enhanced and redshifted light emission from the strained microdisks. Our technique allows the amount of biaxial strain to be customized lithographically, allowing the bandgaps of different microdisks to be independently tuned in a single mask process. Our theoretical calculations show that this platform can deliver substantial performance improvements, including a >200x reduction in the lasing threshold, to biaxially strained germanium lasers for silicon-compatible optical interconnects.

Optics,Mesoscale and Nanoscale Physics
Strain-Induced Enhancement of Electroluminescence from Highly Strained Germanium Light-Emitting Diodes

Jialin Jiang,Muyu Xue,Ching-Ying Lu,Colleen S. Fenrich,Matthew Morea,Kai Zang,Jianfeng Gao,Ming Cheng,Yi Zhang,Theodore I. Kamins,James S. Harris,Junqiang Sun

DOI: https://doi.org/10.1021/acsphotonics.8b01553

IF: 7

2019-01-01

ACS Photonics

Abstract:The full exploration of Si-based photonic integrated circuits is limited by the lack of an efficient light source that is compatible with the complementary metal–oxide–semiconductor process. Highly strained germanium (Ge) is a promising solution, as its band structure can be fundamentally altered by introducing tensile strain. However, the main challenge lies in the incorporation of an electrical structure while maintaining high strain with uniform distribution in the active region. Here we present highly strained Ge LEDs driven by lateral p–i–n junctions and report the strain-induced enhancement of electroluminescence (EL) from Ge. Raman characterization shows that 1.76% strain along the ⟨100⟩ direction with relatively uniform strain distribution is achieved. The observed strain-induced red-shifts of EL spectra agree well with the theoretical prediction, revealing that the direct band gap of Ge can be tuned in the range of 0.785 eV (1580 nm) to 0.658 eV (1885 nm). This work offers a pathway toward a stra...
Uniformly Tensile-Strained Germanium Enabled by a Recessed Nitride Stressor for Efficient Integrated Photodetectors at Longer Wavelengths

Yiding Lin,Danhao Ma,Rui-Tao Wen,Kwang Hong Lee,Xin Guo,Jin Zhou,Hong Wang,Chuan Seng Tan,Jurgen Michel

DOI: https://doi.org/10.1364/cleo_si.2019.sth4o.2

2019-01-01

Abstract:Germanium photodetector, formed with a self-aligned dry etching method, together with a tensile silicon nitride sidewall stressor, exhibits a strain profile with improved uniformity and a $\sim 2\times$ enhancement on the quantum efficiency at the $L$ -band, © 2019 The Author(s)
Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

Yanyan Zhang,Ran Cheng,Shuang Xie,Shun Xu,Xiao Yu,Rui Zhang,Yi Zhao

DOI: https://doi.org/10.1088/0256-307X/34/10/108101

2017-01-01

Chinese Physics Letters

Abstract:We investigate the strain in various Ge-on-insulator (GeOI) micro-structures induced by three phase-change materials (PCMs) (Ge2Sb2Te5, Sb2Te3, GeTe) deposited. The PCMs could change the phase from amorphous state to polycrystalline state with a low temperature thermal annealing, resulting in an intrinsic contraction in the PCM films. Raman spectroscopy analysis is performed to compare the strain induced in the GeOI microstructures by various PCMs. By comparison, Sb2Te3 could induce the largest amount of tensile strain in the GeOI micro-structures after the low temperature annealing. Based on the strain calculated from the Raman peak shifts, finite element numerical simulation is performed to calculate the strain-induced electron mobility enhancement for Ge n-MOSFETs with PCM liner stressors. With the adoption of Sb2Te3 liner stressor, 22% electron mobility enhancement at N-inv = 1x10(13) cm(-2) could be achieved, suggesting that PCM especially Sb2Te3 liner stressor is a promising technique for the performance enhancement of Ge MOSFETs.
Strained Germanium LED with SiN Stressor and Microbridge based on Edge Stress Concentration

Bin Shu,Zhichao Yu,Xinyang Sun,Bingzhang Zhu,Huiyong Hu,Liming Wang,Tian Miao,Ningning Zhang

DOI: https://doi.org/10.1134/s1063782624601535

IF: 0.66

2024-12-06

Semiconductors

Abstract:Tensile strain is a widely discussed mean which induces a direct bandgap in Ge for the realization of semiconductor optoelectronic devices compatible with Si microelectronics. In order to achieve greater stress, a Ge LED based on a microbridge structure is proposed in this paper. According to the edge stress concentration, two isosceles triangles with opposite apexes are etched on the Ge layer, creating ideal tensile strain at the apexes and facilitating the transition of Ge from an indirect bandgap semiconductor to a direct bandgap semiconductor. Furthermore, by introducing a SiN stressor between the Si substrate and the Ge layer, the tensile strain in the Ge layer is increased to 4.5%, thereby improving the optoelectronic properties of the Ge LED. Simulation results show that the optimized Ge LED exhibits the peak wavelength of 2190 nm and the maximum electrical-to-optical conversion efficiency of 2.15%.

physics, condensed matter
Suspended germanium membranes photodetector with tunable biaxial tensile strain and location-determined wavelength-selective photoresponsivity

Shaoteng Wu,Hao Zhou,Qimiao Chen,Lin Zhang,Kwang Hong Lee,Shuyu Bao,Weijun Fan,Chuan Seng Tan

DOI: https://doi.org/10.1063/5.0068849

IF: 4

2021-11-08

Applied Physics Letters

Abstract:A divergent microstructure was fabricated by complementary metal–oxide–semiconductor compatible processes on the central region of a Ge p–i–n photodetector to enhance the residual tensile strain. A tunable biaxial tensile strain of ∼0.22%–1.01% was achieved by varying the geometrical factors, and it was confirmed by Raman measurements and finite element method simulations. The suspended germanium membranes enhance the absorption across the C- and L-bands (1528–1560 and 1561–1620 nm) and extend the cutoff wavelength to ∼1700–1937 nm. The Ge absorption coefficient is enhanced by ∼4.2× to 2951 cm−1 at 1630 nm, which is comparable with that of In0.53Ga0.47As. Furthermore, due to the varying strain distribution on the Ge mesa, each photodetector presents the location-determined wavelength-selective photoresponsivity characteristics. This work offers a promising approach for adjusting the absorption spectra of the photodetector by harnessing geometrically amplified biaxial strain.

physics, applied
Local distribution into brain tumor and pharmacokinetics of 4-pyridoxate diammine hydroxy platinum, a novel cisplatin derivative, after intracarotid administration in rats with 9L malignant glioma: simultaneous brain microdialysis study.

Y. Tokunaga,M. Nakashima,H. Sasaki,N. Tomiyama,M. Nakashima,M. Ichikawa,M. Kaminogo,S. Shibata

DOI: https://doi.org/10.1248/BPB.23.1491

2000-12-01

Biological and Pharmaceutical Bulletin

Abstract:Local distribution into brain tumor and the pharmacokinetics of 4-pyridoxate diammine hydroxy platinum (PyPt), a novel cisplatin derivative, were examined using rats implanted with 9L glioma and compared with cisplatin. PyPt (5.0 mg/kg) and cisplatin (3.5 mg/kg) were administered as selective intracarotid infusions for 30 min to the rats. Dialysates from extracellular fluid (ECF) in tumor and non-tumor brain tissues were collected by simultaneous microdialysis. The amount of platinum was determined by atomic absorption spectrophotometry, as representative of the drug administered. Plasma concentration of total and protein unbound platinum, and urinary excretion amount and tissue distribution of total platinum were also determined. Unbound platinum was accumulated preferentially in the brain tumor tissue ECF after drug administration, while there was little distribution into normal tissue ECF of the brain. In the brain tumor, the values of the unbound platinum AUC and MRT, where AUC is the area under the concentration-time curve and MRT is the mean residence time, for PyPt were 1.7 and 1.3 times larger than with cisplatin, respectively. The brain tumor distribution coefficient (the ratio of brain tumor ECF platinum AUC to plasma protein unbound platinum AUC) for PyPt (0.85) was higher than that for cisplatin (0.69), indicating that the local amount of platinum distributed into the glioma is enhanced by PyPt rather than by cisplatin. The binding to plasma proteins of PyPt (23%) was lower than that of cisplatin (65%). The total platinum concentration in tissues after administration of PyPt was significantly lower than that of cisplatin in the kidney, liver and spleen. In addition, the urinary excretion amount of total platinum after the administration of PyPt was significantly larger than that of cisplatin. These results suggested that PyPt is easily eliminated by rapid urinary excretion because of its reduced interaction with plasma proteins and poor distribution to the kidney or reticuloendothelial tissues such as the liver and spleen. It is concluded that PyPt is an effective cisplatin derivative for the treatment of gliomas with the added advantage of enhancing local distribution of drug into the brain tumor and reducing its accumulation in the kidney, which has previously caused severe nephrotoxicity.
Tensile-Strained Germanium-on-Insulator Substrate Fabrication for Silicon-Compatible Optoelectronics

J. Raja Jain,Dany-Sebastien Ly-Gagnon,Krishna C. Balram,Justin S. White,Mark L. Brongersma,David A. B. Miller,Roger T. Howe

DOI: https://doi.org/10.48550/arXiv.1105.0044

2011-09-18

Abstract:We present a method to fabricate tensile-strained germanium-on-insulator (GOI) substrates using heteroepitaxy and layer transfer techniques. The motivation is to obtain a high-quality wafer-scale GOI platform suitable for silicon-compatible optoelectronic device fabrication. Crystal quality is assessed using X-Ray Diffraction (XRD) and Transmission Electron Microscopy. A biaxial tensile film strain of 0.16% is verified by XRD. Suitability for device manufacturing is demonstrated through fabrication and characterization of metal-semiconductor-metal photodetectors that exhibit photoresponse beyond 1.55 {\mu}m. The substrate fabrication process is compatible with complementary metal-oxide-semiconductor manufacturing and represents a potential route to wafer-scale integration of silicon-compatible optoelectronics.

Optics
Direct bandgap emission from strain-doped germanium

Lin-Ding Yuan,Shu-Shen Li,Jun-Wei Luo

DOI: https://doi.org/10.1038/s41467-024-44916-w

IF: 16.6

2024-01-21

Nature Communications

Abstract:Germanium (Ge) is an attractive material for Silicon (Si) compatible optoelectronics, but the nature of its indirect bandgap renders it an inefficient light emitter. Drawing inspiration from the significant expansion of Ge volume upon lithiation as a Lithium (Li) ion battery anode, here, we propose incorporating Li atoms into the Ge to cause lattice expansion to achieve the desired tensile strain for a transition from an indirect to a direct bandgap. Our first-principles calculations show that a minimal amount of 3 at.% Li can convert Ge from an indirect to a direct bandgap to possess a dipole transition matrix element comparable to that of typical direct bandgap semiconductors. To enhance compatibility with Si Complementary-Metal-Oxide-Semiconductors (CMOS) technology, we additionally suggest implanting noble gas atoms instead of Li atoms. We also demonstrate the tunability of the direct-bandgap emission wavelength through the manipulation of dopant concentration, enabling coverage of the mid-infrared to far-infrared spectrum. This Ge-based light-emitting approach presents exciting prospects for surpassing the physical limitations of Si technology in the field of photonics and calls for experimental proof-of-concept studies.

multidisciplinary sciences
Anti-relaxation of tensile lattice strain in Si-embedded Ge strip structure for photonic device applications

Joshua Chombo,Mohd Faiz Bin Amin,Jose A. Piedra-Lorenzana,Takeshi Hizawa,Keisuke Yamane,Mingjun Jiang,Donghwan Ahn,Kazumi Wada,Yasuhiko Ishikawa

DOI: https://doi.org/10.35848/1347-4065/ad2137

IF: 1.5

2024-02-17

Japanese Journal of Applied Physics

Abstract:This paper reports an anti-relaxation of tensile lattice strain in a narrow Ge strip epitaxially grown on Si by CVD. In an ordinary Ge mesa strip as narrow as 1 μm or below, an in-plane tensile strain as high as 0.2% due to the thermal expansion mismatch with the Si substrate is relaxed by edge-induced relaxation. Such a relaxation is significantly prevented by embedding the Ge strip entirely in Si, as supported by Raman and photoluminescence spectra as well as theoretical strain analysis. This anti-relaxation is effective for efficient optical absorption and light emission at around 1.55 μm.

physics, applied
Tuning the Electro-optical Properties of Germanium Nanowires by Tensile Strain

J. Greil,A. Lugstein,C. Zeiner,G. Strasser,E. Bertagnolli

DOI: https://doi.org/10.1021/nl303288g

IF: 10.8

2012-11-12

Nano Letters

Abstract:In this Letter we present the electrical and electro-optical characterization of single crystalline germanium nanowires (NWs) under tensile strain conditions. The measurements were performed on vapor-liquid-solid (VLS) grown germanium (Ge) NWs, monolithically integrated into a micromechanical 3-point strain module. Uniaxial stress is applied along the ⟨111⟩ growth direction of individual, 100 nm thick Ge NWs while at the same time performing electrical and optical characterization at room temperature. Compared to bulk germanium, an anomalously high and negative-signed piezoresistive coefficient has been found. Spectrally resolved photocurrent characterization on strained NWs gives experimental evidence on the strain-induced modifications of the band structure. Particularly we are revealing a rapid decrease in resistivity and a red-shift in photocurrent spectra under high strain conditions. For a tensile strain of 1.8%, resistivity decreased by a factor of 30, and the photocurrent spectra shifted by 88 meV. Individual stressed NWs are recognized as an ideal platform for the exploration of strain-related electronic and optical effects and may contribute significantly to the realization of novel optoelectronic devices, strain-enhanced field-effect transistors (FETs), or highly sensitive strain gauges.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Tensile-strained germanium microdisk electroluminescence

M Prost,M El Kurdi,A Ghrib,S Sauvage,X Checoury,N Zerounian,F Aniel,G Beaudoin,I Sagnes,F Boeuf,P Boucaud

DOI: https://doi.org/10.1364/OE.23.006722

2015-03-09

Abstract:We report room temperature electroluminescence of tensile-strained germanium microdisks. The strain is transferred into the microdisks using silicon nitride stressors. Carrier injection is achieved with Schottky contacts on n-type doped germanium. We show that a biaxial tensile-strain up to 0.72% can be transferred by optimizing the carrier injection profile. The transferred strain is measured by the electroluminescence spectral red-shift and compared to finite element modeling. We discuss the impact of this strain level to achieve population inversion in germanium.
Strained Germanium Microbridge LED Array Using Elliptical Windows Etching

Bingzhang Zhu,Bin Shu,Xinyang Sun,Zhichao Yu,Huiyong Hu,Tian Miao,Liming Wang,Ningning Zhang

DOI: https://doi.org/10.1134/s1063782624601249

IF: 0.66

2024-11-04

Semiconductors

Abstract:As a candidate for a group IV luminescent material, germanium (Ge) has broad development prospects in silicon-based light sources. Introducing tensile strain into Ge to change its band structure and improve its electroluminescence efficiency is a key research focus for silicon-based light sources. A strained Ge microbridge LED array using elliptical windows etching is presented in this paper. A significant amount of uniaxial tensile stress can be applied at the center of the bridge by using microbridge structures. The stress concentration at the corners of the microbridge can be eliminated by utilizing elliptical window etching. Simulation results show that a uniaxial tensile stress of 2.48 GPa was achieved in the central region of the Ge microbridge, resulting in a 2.4% uniaxial tensile strain, which narrowed the E gΓ of Ge in the microbridge center to 0.629 eV. This resulted in an optimal electroluminescence conversion efficiency of 1.79% and a peak emission wavelength of 1838 nm. This work offers a pathway toward higher efficiency electroluminescence in group IV materials, as well as opens possibilities for silicon-based light sources compatible with CMOS process.

physics, condensed matter
Impact of Local Strain From Selective Epitaxial Germanium With Thin Si/SiGe Buffer on High-Performance p-i-n Photodetectors With a Low Thermal Budget

Loh, W.-Y.,Wang, J.,J. D. Ye,Yang, R.,H. S. Nguyen,K. T. Chua,J. F. Song,T. H. Loh,Y. Z. Xiong,S. J. Lee,M. B. Yu,G. Q. Lo,D. L. Kwong

DOI: https://doi.org/10.1109/LED.2007.906814

2007-01-01

Abstract:This letter reports on the impact of selective epitaxial germanium, specifically its local strain effects, on high-performance p-i-n photodetectors for near-infrared applications. By combining a thin compliant Si epitaxial layer (~6 nm) with SiGe buffer (10-15 nm), we demonstrated a high-quality Ge film (~150 nm) prepared by two-step growth. Without using high-temperature cyclic anneal, Ge films with smooth surface (root mean square = ~ 0.67 nm) and low dislocation density (4 x 106 cm-2) have been produced. The Si buffer locally enhances the tensile strain (epsiv = 0.63%) in Ge while slightly suppressing the dark current by half to 0.12 muA (with circular ring area = 1230 mum2 and spacing = 2 mum). A lateral p-i-n Ge photodetector has been demonstrated with enhanced photoresponse of ~190 mA/W at 1520 nm and a 3-dB bandwidth of 5.2 GHz at 1 V.
Ge Microdisk with Lithographically-Tunable Strain using CMOS-Compatible Process

David S. Sukhdeo,Jan Petykiewicz,Shashank Gupta,Daeik Kim,Sungdae Woo,Youngmin Kim,Jelena Vuckovic,Krishna C. Saraswat,Donguk Nam

DOI: https://doi.org/10.1364/OE.23.033249

2015-10-25

Abstract:We present germanium microdisk optical resonators under a large biaxial tensile strain using a CMOS-compatible fabrication process. Biaxial tensile strain of ~0.7% is achieved by means of a stress concentration technique that allows the strain level to be customized by carefully selecting certain lithographic dimensions. The partial strain relaxation at the edges of a patterned germanium microdisk is compensated by depositing compressively stressed silicon nitride layer. Two-dimensional Raman spectroscopy measurements along with finite-element method simulations confirm a relatively homogeneous strain distribution within the final microdisk structure. Photoluminescence results show clear optical resonances due to whispering gallery modes which are in good agreement with finite-difference time-domain optical simulations. Our bandgap-customizable microdisks present a new route towards an efficient germanium light source for on-chip optical interconnects.

Optics
Tensilely Strained Ge Films on Si Substrates Created by Physical Vapor Deposition of Solid Sources

Yize Stephanie Li,John Nguyen

DOI: https://doi.org/10.48550/arXiv.1811.07298

2018-11-18

Materials Science

Abstract:The development of Si-compatible active photonic devices is a high priority in computer and modern electronics industry. Ge is compatible with Si and is a promising light emission material. Nearly all Ge-on-Si materials reported so far were grown using toxic precursor gases. Here we demonstrate the creation of Ge films on Si substrates through physical vapor deposition of toxin-free solid Ge sources. Structural characterization indicates that a high tensile strain is introduced in the Ge film during the deposition process. We attribute the presence of such a tensile strain to the difference in thermal expansion coefficient between Si and Ge. A Ge peak, centered at ~2100 nm, is evident in the photoluminescence spectra of these materials, which might result from direct band gap photoluminescence alone, or from superposition of direct band gap and indirect band gap photoluminescence. These Ge-on-Si materials are therefore promising in light emission applications.
Tensile-strained germanium microdisks

A. Ghrib,M. El Kurdi,M. de Kersauson,M. Prost,S. Sauvage,X. Checoury,G. Beaudoin,I. Sagnes,P. Boucaud

DOI: https://doi.org/10.1063/1.4809832

IF: 4

2013-06-03

Applied Physics Letters

Abstract:We show that a strong tensile strain can be applied to germanium microdisks using silicon nitride stressors. The transferred strain allows one to control the direct band gap emission that is shifted from 1550 nm up to 2000 nm, corresponding to a biaxial tensile strain around 1%. Both Fabry-Perot and whispering gallery modes are evidenced by room temperature photoluminescence measurements. Quality factors up to 1350 and limited by free carrier absorption of the doped layer are observed for the whispering gallery modes. We discuss the strain profile in the microdisks as a function of the disk geometry. These tensile-strained microdisks are promising candidates to achieve Ge laser emission in compact microresonators.

physics, applied
Strain-Induced Lateral Heterostructures in Patterned Semiconductor Nanomembranes for Micro- and Optoelectronics

Abdullah Gok,Xiaowei Wang,Shelley Scott,Abhishek Bhat,Hanfei Yan,Ajith Pattammattel,Evgeny Nazaretski,Yong S. Chu,Zicong Huang,Richard M. Osgood,Max G. Lagally,Roberto Paiella

DOI: https://doi.org/10.1021/acsanm.1c00966

IF: 6.14

2021-06-10

ACS Applied Nano Materials

Abstract:The ability to tailor the energy band lineup of semiconductor materials plays a key role in the development of many electronic and optoelectronic devices and normally relies on heteroepitaxy. Here, we report a different method, based on strain engineering, for the controlled introduction of variations in bandgap energy with lateral position in thin films. External stress is applied on Ge nanomembranes stacked with an array of amorphous-Si pillars in order to create a non-uniform strain (and therefore bandgap energy) distribution commensurate with the sample thickness variations. The resulting strain profiles are mapped using Bragg diffraction with a hard X-ray probe featuring nanoscale spatial resolution. Compared with traditional heterostructures grown by epitaxial techniques, these strain-engineered samples involve a single chemical composition and are not limited in the choice of compatible materials by any restriction imposed by lattice-matching requirements. Furthermore, their energy band lineups can be patterned in nearly arbitrary shapes using nanolithography to control the thickness profile and can be tuned actively by varying the applied stress. As a result, these structures are attractive for a wide range of device applications (including lasers, LEDs, solar cells, and thermoelectrics) that require complex heterostructure lineups with multiple bandgap energies.This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology

A case report of an obesity hypoventilation syndrome associated with obstructive sleep apnea due to a carotid body paraganglioma.

Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics

A Nanomembrane-Based Bandgap-Tunable Germanium Microdisk Using Lithographically-Customizable Biaxial Strain for Silicon-Compatible Optoelectronics

Strain-Induced Enhancement of Electroluminescence from Highly Strained Germanium Light-Emitting Diodes

Uniformly Tensile-Strained Germanium Enabled by a Recessed Nitride Stressor for Efficient Integrated Photodetectors at Longer Wavelengths

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

Strained Germanium LED with SiN Stressor and Microbridge based on Edge Stress Concentration

Suspended germanium membranes photodetector with tunable biaxial tensile strain and location-determined wavelength-selective photoresponsivity

Local distribution into brain tumor and pharmacokinetics of 4-pyridoxate diammine hydroxy platinum, a novel cisplatin derivative, after intracarotid administration in rats with 9L malignant glioma: simultaneous brain microdialysis study.

Tensile-Strained Germanium-on-Insulator Substrate Fabrication for Silicon-Compatible Optoelectronics

Direct bandgap emission from strain-doped germanium

Anti-relaxation of tensile lattice strain in Si-embedded Ge strip structure for photonic device applications

Tuning the Electro-optical Properties of Germanium Nanowires by Tensile Strain

Tensile-strained germanium microdisk electroluminescence

Strained Germanium Microbridge LED Array Using Elliptical Windows Etching

Impact of Local Strain From Selective Epitaxial Germanium With Thin Si/SiGe Buffer on High-Performance p-i-n Photodetectors With a Low Thermal Budget

Ge Microdisk with Lithographically-Tunable Strain using CMOS-Compatible Process

Tensilely Strained Ge Films on Si Substrates Created by Physical Vapor Deposition of Solid Sources

Tensile-strained germanium microdisks

Strain-Induced Lateral Heterostructures in Patterned Semiconductor Nanomembranes for Micro- and Optoelectronics