Abstract:The field of silicon photonics has seen a period of rapid technological advancement over the past decade, with significant interest and investment from both academia and industry. Progress is expected to continue, with global sales of silicon photonics products predicted to reach US$1 billion by 2020. A key motivation for silicon photonics is integration; achieved by using the CMOS compatible materials silicon and germanium. Here, we establish a silicon-germanium-on-insulator material platform using a rapid melt growth technique. We present a novel method for the fabrication of multiple, uniform composition localised silicon-germanium-on-insulator layers, demonstrating the ability to tune the composition of each layer by modifying the structural parameters of the layers, as shown in Fig. 1. This is achieved using only a single Ge growth step and a single anneal step, therefore dramatically reducing fabrication cost and complexity when compared with traditional epitaxy techniques.We investigate the regrowth mechanism exhibited by this rapid melt growth technique, and study the effects of the structural parameters of the tailored structures on the SiGe composition profiles. Using this material platform we can potentially exploit the tunable bandgap of the SiGe alloy for wavelength division multiplexing applications, with the potential to form low power electro-absorption modulators with an extremely high bandwidth density when compared to other modulator device designs. In addition, we discuss extending silicon photonic circuits into mid-infrared wavelengths, and identify the potential applications of such systems.We present some early results from passive mid-infrared photonic devices on a silicon-on-insulator platform.

Tensile-Strained Germanium-on-Insulator Substrate Fabrication for Silicon-Compatible Optoelectronics

Strained germanium thin film membrane on silicon substrate for optoelectronics

Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics

A Universal Approach to High-Index-Contrast Flexible Integrated Photonics

Single Crystal Silicon-Germanium-On-Insulator for High Density Optical Interconnects

A Nanomembrane-Based Bandgap-Tunable Germanium Microdisk Using Lithographically-Customizable Biaxial Strain for Silicon-Compatible Optoelectronics

Uniformly Tensile-Strained Germanium Enabled by a Recessed Nitride Stressor for Efficient Integrated Photodetectors at Longer Wavelengths

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Tensilely Strained Ge Films on Si Substrates Created by Physical Vapor Deposition of Solid Sources

Ge Microdisk with Lithographically-Tunable Strain using CMOS-Compatible Process

Germanium doping for improved silicon substrates and devices

High-efficiency Normal-Incidence Vertical P-I-n Photodetectors on a Germanium-on-insulator Platform

Germanium based photonic components toward a full silicon/germanium photonic platform

Selective Epitaxy of Germanium on silicon for the fabrication of CMOS compatible short-wavelength infrared photodetectors

Fabrication of Germanium-on-insulator in a Ge wafer with a crystalline Ge top layer and buried GeO2 layer by Oxygen ion implantation

Tuning the Electro-optical Properties of Germanium Nanowires by Tensile Strain

Tensile-Strained Germanium CMOS Integration on Silicon

Direct bandgap emission from strain-doped germanium

Ge-on-insulator fabrication based on Ge-on-nothing technology

Epitaxial Ge thin film Growth on Si Using a Cost-Effective Process in Simplified CVD Reactor