Abstract:Silicon (Si) and/or germanium (Ge) nanomembranes (NMs) play crucial roles in various applications, including conventional microelectronics, as well as recently emerging high-performance flexible/stretchable electronics. Because of their superior mechanical properties, such as flexibility, strain-ability, and bond-ability, Si/GeNMs can be strain-engineered, functionalized, and assembled into two/three-dimensional (2D/3D) micro/nano-architectures and devices. These features offer significant opportunities in nanoscience and for the development of nanotechnology. Strain engineering of semiconductor NMs enables the modification of their physical properties, in particular those of Si and Ge (e.g., carrier mobility, band structure), thus creating enormous potential for use in high-speed rigid/flexible electronics, optoelectronics, and nanophotonics. The mechanical properties of NMs allow large deformations at the micro/nano-scale, via self-assembly or guided self-assembly, leading to 3D micro/nano-architectures, including tubes, wrinkles, buckles, and mesostructures. The transformation from 2D planar NMs to 3D micro/nano-architectures again strongly influences physical properties (e.g., mechanics, optics, and electronics), providing fascinating applications in sensing, energy harvesting, bio-integration, and flexible/stretchable electronics. In this Review, the recent progress in strain engineering and mechanical assembly of Si/GeNMs is reviewed, ranging from fundamental principles to device applications.

A Nanomembrane-Based Bandgap-Tunable Germanium Microdisk Using Lithographically-Customizable Biaxial Strain for Silicon-Compatible Optoelectronics

Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics

Ge Microdisk with Lithographically-Tunable Strain using CMOS-Compatible Process

Strained germanium thin film membrane on silicon substrate for optoelectronics

Direct-bandgap light-emitting germanium in tensilely strained nanomembranes

Tensile-strained germanium microdisks

Direct Bandgap Light Emission from Strained Ge Nanowires Coupled with High-Q Optical Cavities

Strain-Induced Lateral Heterostructures in Patterned Semiconductor Nanomembranes for Micro- and Optoelectronics

Direct bandgap emission from strain-doped germanium

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

Strain-Induced Enhancement of Electroluminescence from Highly Strained Germanium Light-Emitting Diodes

A CMOS-compatible approach to fabricate an ultra-thin germanium-on-insulator with large tensile strain for Si-based light emission.

Biaxially Strained Germanium Micro-Dot Array by Hydrogen Ion Implantation

Direct-Bandgap Germanium Active Layers Pumped above Transparency Based on Tensilely Strained Nanomembranes

Tensile-strained germanium microdisk electroluminescence

Quantum-confined Blue Photoemission in Strain-Engineered Few-Atomic-layer 2D Germanium

Strain Engineering and Mechanical Assembly of Silicon/germanium Nanomembranes

A Universal Approach to High-Index-Contrast Flexible Integrated Photonics

Uniformly Tensile-Strained Germanium Enabled by a Recessed Nitride Stressor for Efficient Integrated Photodetectors at Longer Wavelengths

Low-threshold Optically Pumped Lasing in Highly Strained Germanium Nanowires

Strained Germanium Microbridge LED Array Using Elliptical Windows Etching