Abstract:The Si/SiGe heterosystem would be ideally suited for the realization of complementary metal-oxide-semiconductor (CMOS)-compatible integrated light sources, but the indirect band gap, exacerbated by a type-II band offset, makes it challenging to achieve efficient light emission. We address this problem by strain engineering in ordered arrays of vertically close-stacked SiGe quantum dot (QD) pairs. The strain induced by the respective lower QD creates a preferential nucleation site for the upper one and strains the upper QD as well as the Si cap above it. Electrons are confined in the strain pockets in the Si cap, which leads to an enhanced wave function overlap with the heavy holes near the upper QD's apex. With a thickness of the Si spacer between the stacked QDs below 5 nm, we separated the functions of the two QDs: The role of the lower one is that of a pure stressor, whereas only the upper QD facilitates radiative recombination of QD-bound excitons. We report on the design and strain engineering of the QD pairs via strain-dependent Schrödinger-Poisson simulations, their implementation by molecular beam epitaxy, and a comprehensive study of their structural and optical properties in comparison with those of single-layer SiGe QD arrays. We find that the double QD arrangement shifts the thermal quenching of the photoluminescence signal at higher temperatures. Moreover, detrimental light emission from the QD-related wetting layers is suppressed in the double-QD configuration.

Quantum-confined Blue Photoemission in Strain-Engineered Few-Atomic-layer 2D Germanium

Strain-Induced Enhancement of Electroluminescence from Highly Strained Germanium Light-Emitting Diodes

Direct bandgap emission from strain-doped germanium

A Nanomembrane-Based Bandgap-Tunable Germanium Microdisk Using Lithographically-Customizable Biaxial Strain for Silicon-Compatible Optoelectronics

Direct-bandgap light-emitting germanium in tensilely strained nanomembranes

Direct-Bandgap Electroluminescence from Germanium with Subband Engineering Utilizing a Metal-Oxide-Semiconductor Structure

Undoped Strained Ge Quantum Well with Ultrahigh Mobility Grown by Reduce Pressure Chemical Vapor Deposition

Strained germanium thin film membrane on silicon substrate for optoelectronics

Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics

Uniformly Tensile-Strained Germanium Enabled by a Recessed Nitride Stressor for Efficient Integrated Photodetectors at Longer Wavelengths

Photoluminescence enhancement by deterministically site-controlled, vertically stacked SiGe quantum dots

Direct Bandgap Light Emission from Strained Ge Nanowires Coupled with High-Q Optical Cavities

Germanium crystals on silicon show their light

Unlocking the Potential of GeS Monolayer: Strain-Enabled Control of Electronic Transports and Exciton Radiative Lifetimes

Tuning the Electro-optical Properties of Germanium Nanowires by Tensile Strain

Giant Thermomechanical Bandgap Engineering in Quasi-two-dimensional Tellurium

Two-Dimensional Gese As an Isostructural and Isoelectronic Analogue of Phosphorene: Sonication-Assisted Synthesis, Chemical Stability, and Optical Properties

Strained Germanium Microbridge LED Array Using Elliptical Windows Etching

Imaging Strain-Localized Single-Photon Emitters in Layered GaSe below the Diffraction Limit

Significant Photoluminescence Improvements from Bulk Germanium-Based Thin Films with Ultra-low Threading Dislocation Densities