Abstract:Germanium based metal oxide semiconductor (MOS) device has been a research hotspot and considered as a potential candidate for future complementary MOS (CMOS) technology due to its high and symmetric carrier mobility. However, the poor quality of gate dielectric/channel interface significantly restricts the performances of germanium based MOS devices. Besides, the solid-solubility and activation concentration of dopants in Ge are both quite low, and the dopants diffuse fast in Ge, which makes it difficult to achieve ultra-shallow junction with high dopant concentration, especially for Ge NMOS devices.To solve these problems, different techniques are proposed and overviewed. The proposed nitrogen-plasma-passivation method can effectively suppress the regrowth of germanium sub-oxide and reduce the interface state density. Thus the performance of the fabricated Ge NMOS device is significantly improved. To enhance the n-type dopant activation in Ge, the multiple implantation technique and the multiple annealing technique are proposed. High electrical activation over 1 1020 cm-3 is achieved, and the corresponding contact resistivity is reduced to 3.8 10-7 cm2. Besides, the implantation after germanide (IAG) technique is first proposed to modulate the Schottky barrier height (SBH). The record-low electron SBH of 0.10 eV is obtained by IAG technique, and the optimized process window is given. In addition, the poor thermal stability of NiGe restricts the further improvement in performance of Ge MOS device. P and Sb co-implantation technique and novel ammonium fluoride pretreatment method are proposed to improve the thermal stability of NiGe. The electrical characteristic of NiGe/Ge diode is also improved simultaneously. The results provide the guidelines for further enhancing the performances of germanium-based MOS devices.

Direct-Bandgap Electroluminescence from Germanium with Subband Engineering Utilizing a Metal-Oxide-Semiconductor Structure

Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Direct bandgap emission from strain-doped germanium

Direct and indirect band gap room temperature electroluminescence of Ge diodes

Strain-Induced Enhancement of Electroluminescence from Highly Strained Germanium Light-Emitting Diodes

Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform

High Performance Ge Ultra-Shallow Junctions Fabricated by A Novel Formation Technique Featuring Spin-On Dopant and Laser Annealing for Sub-10 Nm Technology Applications

Hyperdoping of germanium with argon toward strain-doping-induced indirect-to-direct bandgap transition in Ge

High-efficiency Normal-Incidence Vertical P-I-n Photodetectors on a Germanium-on-insulator Platform

Surface Plasmon Enhanced Graphene/P-Gan Heterostructure Light-Emitting Diode by Ag Nano-Particles

Graphene/p-AlGaN/p-GaN Electron Tunnelling Light Emitting Diodes with High External Quantum Efficiency

Direct-bandgap light-emitting germanium in tensilely strained nanomembranes

Gate tunable surface plasmon resonance enhanced graphene/Ag nanoparticles-polymethyl methacrylate/graphene/p-GaN heterostructure light-emitting diodes.

Ge CMOS Technology with Advanced Interface and Junction Engineering.

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

Bidirectional Direct-Current Electroluminescence from I-Mgxzn1−xo/n-zno/siox Double-Barrier Heterostructures on Si

Research Progress of High Mobility Germanium Based Metal Oxide Semiconductor Devices

Strained Germanium LED with SiN Stressor and Microbridge based on Edge Stress Concentration

Direct Bandgap Light Emission from Strained Ge Nanowires Coupled with High-Q Optical Cavities

Low specific contact resistivity to n-Ge and well-behaved Ge n+ p diode achieved by multiple implantation and multiple annealing technique

Significant Photoluminescence Improvements from Bulk Germanium-Based Thin Films with Ultra-low Threading Dislocation Densities