Abstract:Color-mixed (cm) light-emitting diodes (LEDs) are theoretically the most efficient white light emitters, projected to improve white light luminous efficacy by 34% compared to incumbent phosphor converted LEDs. Since white light technology is globally pervasive and essential, small improvements in LED technology can result in energy savings. However, cm-LEDs are not yet realized due to poor efficacy in green and amber emitting materials, a spectral region colloquially referred to as the green gap. ZnGeN2 is nearly isostructural and closely lattice-matched to GaN and can be heteroepitaxially integrated with existing GaN devices; ZnGeN2/GaN hybrid structures are theorized to emit green (∼530 nn) light with a spontaneous emission rate 4.6-4.9 times higher than traditional InGaN LEDs when incorporated into III-N LED structures. In this report we demonstrate the molecular beam epitaxy (MBE) growth of GaN and ZnGeN2 superlattices, an important step towards realizing multiple quantum well structures required for efficient LEDs. Elemental analysis, including atom probe tomography, shows that Ga and Ge are observed in both ZnGeN2 and GaN layers, degrading the structural uniformity. The lack of elemental abruptness also leads to increased defect luminescence and reabsorption of band edge luminescence. The source of unintentional Ga distributed throughout the ZnGeN2 layers was identified as excess flux escaping from around the closed MBE shutter. The source of unintentional Ge, which tended to incorporate as a single delta-doped layer in GaN, was identified as Ge riding along the cyclical metal-rich Ga adlayer used for high quality GaN, incorporating during subsequent nitrogen-rich growth step. Modifying the growth strategy results in improved structural quality, elemental abruptness, and luminescence response. This realization of structurally and elementally abrupt interfaces demonstrates the potential of heteroepitaxially integrated binary and ternary nitrides for energy-relevant devices.

Significant Photoluminescence Improvements from Bulk Germanium-Based Thin Films with Ultra-low Threading Dislocation Densities

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Direct-Bandgap Electroluminescence from Germanium with Subband Engineering Utilizing a Metal-Oxide-Semiconductor Structure

Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Optical properties of Ge/Si quantum dot superlattices

Dislocation-related Photoluminescence of GeSn Films Grown on Ge (001) Substrates by Molecular Beam Epitaxy

Synthesis and temperature-dependent photoluminescence of high density GeSe triangular nanoplate arrays on Si substrates

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Quantum-confined Blue Photoemission in Strain-Engineered Few-Atomic-layer 2D Germanium

Strain-Induced Enhancement of Electroluminescence from Highly Strained Germanium Light-Emitting Diodes

Hyperdoping of germanium with argon toward strain-doping-induced indirect-to-direct bandgap transition in Ge

Ge Related Defect Energy And Microcavity Effect In Gan Epitaxial Layer

Impact of Minority Carrier Lifetime on the Performance of Strained Ge Light Sources

Impact of Local Strain From Selective Epitaxial Germanium With Thin Si/SiGe Buffer on High-Performance p-i-n Photodetectors With a Low Thermal Budget

Impacts of Doping on Epitaxial Germanium Thin Film Quality and Si-Ge Interdiffusion

Systematic Studies of the Photoluminescence of Ge Quantum Dots Grown on Strained Si(0.7)Ge(0.3) Buffer Layer

Improving luminescence response in ZnGeN2/GaN superlattices: defect reduction through composition control

Reduced-Toxicity and Highly Luminescent Germanium-Lead Perovskites Enabled by Strain Reduction for Light-Emitting Diodes

Dislocation Analysis in Homoepitaxial Gainn/Gan Light Emitting Diode Growth

Effects of phosphorous and antimony doping on thin Ge layers grown on Si