Abstract:Materials solutions are required to enhance radiative recombination in the 520 nm to 620 nm wavelength region, termed the 'green gap', where III-N emitters are inefficient and phosphide materials cannot emit due to an indirect transition. The II-IV-N 2 family of materials (II = Zn, Mg and IV = Si, Ge, Sn) provides a potential solution; the compounds are structurally analogous to the III-N materials with direct optical band gaps and published models suggest heteroepitaxial integration of ZnGeN 2 into GaN LEDs may significantly improve recombination efficiency. In this work we present GaN/ZnGeN 2 /GaN double heterojunctions grown by molecular beam epitaxy (MBE). The MBE-grown heterogeneous interfaces are coherent as measured by electron microscopy and X-ray diffraction, and they are chemically abrupt as measured by X-ray energy dispersive spectroscopy mapping. Electron microscopy shows threading dislocations nucleated at both interfaces, indicating the need for further improvement of growth methods. In particular, the first 30 nm of GaN grown on ZnGeN 2 is highly defective, likely due to the low growth temperature used to prevent Zn desorption. Photoluminescence spectroscopy shows signals of unintentional Zn and Ge doping in the GaN and a 2.9 eV Zn:GaN defect band (donor-acceptor pair) convolved with a separate defect band of distinct physical origin (free-to-bound) which originates from the ZnGeN 2 layer. We identify GeZn antisite defects or GaGe impurities, as suggested by previously published defect calculations, as the most likely candidates for this luminescence. This work demonstrates coherent interfaces between ZnGeN 2 and GaN, highlighting defects and associated properties of interest with respect to optoelectronic applications.

Ge Related Defect Energy And Microcavity Effect In Gan Epitaxial Layer

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Defect Structure and Evolution of GaN-Based Light-Emitting Diodes on Planar and Cone-Patterned Sapphire Substrates

The Reflectance of Solid-Phase Epitaxial Pd/Ge Film on GaAs and Its Application for VCSELs Array

Impurity Effects on Photoluminescence in Lateral Epitaxially Overgrown Gan

Significant Photoluminescence Improvements from Bulk Germanium-Based Thin Films with Ultra-low Threading Dislocation Densities

Structure, defects, and optical properties of commensurate GaN/ZnGeN2/GaN double heterojunctions

Defect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase Epitaxy

Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Emission from Defects in Thin Gan Epilayers Grown on Vicinal 4H-Sic Substrates

Study of the Defects in GaN Epitaxial Films Grown on Sapphire by HVPE

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Evolution and Control of Dislocations in Gan Grown on Cone-Patterned Sapphire Substrate by Metal Organic Vapor Phase Epitaxy

Near-Field Spectroscopy Of Gan Blue Light Emission Diode

Secondary Ion Mass Spectroscopy and Photoluminescence Investigations on the Gan Epilayer Grown on Si Substrate

Investigation of Dislocations and Defects in Epitaxial Lateral Overgrown GaN by Photoelectrochemical Wet Etching

Sub-bandgap Excited Photoluminescence Probing of Deep Defect Complexes in GaN Doped by Si, Ge and C Impurities

Observation of Optically-Active Metastable Defects in Undoped Gan Epilayers

Gan heteroepitaxial growth techniques

Optical Defect in Gan-Based Laser Diodes Detected by Cathodoluminescence