Abstract:There are significant differences in the extent of impurity incorporation on different crystallographic directions of GaN microstructures, and the impurity-related deep energy level behavior will have a significant impact on device performance. However, a comprehensive understanding of the effect of lateral growth on device performance has not been achieved due to the lack of comprehensive spatial distribution characterization of the optical behavior and impurity incorporation in GaN microstructures. We present a comprehensive study of the optical behavior and growth mechanism of self-assembled GaN microdisks using nanoscale spatially resolved cathodoluminescence (CL) mapping. We have found a clear growth orientation-dependent optical behavior of the lateral and vertical growth sectors of self-assembled GaN microcrystals. The lateral growth sector, i.e., the {101̅1} sector, forms six side facets of the microdisk and shows significant near-bandgap emission (NBE) and weak deep energy level luminescence. Cavity effect enhanced emission was found for the first time in such a truncated hexagonal Na-flux GaN microdisk system with an ultra-smooth surface ( R a < 0.7 nm) and low stress. The self-assembled microdisk shows significant ultraviolet (UV) lasing action (main lasing peak wavelength 370.9 nm, quality factor 1278, threshold 6 × 10 4 µJ/cm 2 ) under pulsed optical pumping. We believe that the appearance of UV lasing action may be related to the light limitation on the six side facets of the lateral growth of the GaN microdisk, the high structural quality, the low content of deep energy level defects, the low surface roughness, and the low stress.

Impurity Effects on Photoluminescence in Lateral Epitaxially Overgrown Gan

Spatial Variation of Electrical Properties in Lateral Epitaxially Overgrown Gan

Carrier Density Imaging of Lateral Epitaxially Overgrown Gan Using Scanning Confocal Raman Microscopy

Dislocation Clustering and Luminescence Nonuniformity in Bulk Gan and Its Homoepitaxial Film

Effect of stacking faults on the photoluminescence spectrum of zincblende GaN

Effects of Impurity Band on Multiphoton Photocurrent in GaN and InGaN Photodetectors

Study of Optical Properties of Bulk GaN Crystals Grown by HVPE

Emission from Defects in Thin Gan Epilayers Grown on Vicinal 4H-Sic Substrates

The Effect of Lateral Growth of Self-Assembled GaN Microdisks on UV Lasing Action

Study on Luminescence of GaN Impurity by Near-Field Spectroscopy

Cathodoluminescence Study on the Impurity Behaviors at Threading Dislocations in GaN

Secondary Ion Mass Spectroscopy and Photoluminescence Investigations on the Gan Epilayer Grown on Si Substrate

Ge Related Defect Energy And Microcavity Effect In Gan Epitaxial Layer

The Discrepancies Between Theory and Experiment in the Optical Emission of Monolayer In(Ga)N Quantum Wells Revisited by Transmission Electron Microscopy

The effects of concomitant In and N incorporation on the photoluminescence of GaInNAs

Effects of Strain and Mg-Dopant on the Photoluminescence Spectra in P-Type Gan

Effect Of Potential Fluctuations On Photoluminescence In Mg-Doped Gan

Investigation of Dislocations and Defects in Epitaxial Lateral Overgrown GaN by Photoelectrochemical Wet Etching

Effects of impurity band on multiphoton photocurrent from InGaN and GaN photodetectors

Sub-bandgap Excited Photoluminescence Probing of Deep Defect Complexes in GaN Doped by Si, Ge and C Impurities

Optical Properties Evolution of GaN Film Grown Via Lateral Epitaxial Overgrowth